1. 2019
  2. High Volume Electrical Characterization of Semiconductor Qubits

    Pillarisetty, R., George, H. C., Watson, T., Lampert, L., Krähenmann, T., Zwerver, A. M., Veldhorst, M., Scappucci, G., Vandersypen, L. M. K. & More Authors, 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers (IEEE), Vol. 2019-December. 4 p. 8993587

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  3. Impact of Classical Control Electronics on Qubit Fidelity

    Van Dijk, J. P. G., Kawakami, E., Schouten, R. N., Veldhorst, M., Vandersypen, L. M. K., Babaie, M., Charbon, E. & Sebastiano, F., 2019, In : Physical Review Applied. 12, 4, 20 p., 044054.

    Research output: Contribution to journalArticleScientificpeer-review

  4. Light effective hole mass in undoped Ge/SiGe quantum wells

    Lodari, M., Tosato, A., Sabbagh, D., Schubert, M. A., Capellini, G., Sammak, A., Veldhorst, M. & Scappucci, G., 2019, In : Physical Review B. 100, 4, 4 p., 041304.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Quantum Transport Properties of Industrial Si 28 / Si O2 28

    Sabbagh, D., Massa, L., Amitonov, S. V., Boter, J. M., Droulers, G., Eenink, H. G. J., Veldhorst, M., Vandersypen, L. M. K. & Scappucci, G., 2019, In : Physical Review Applied. 12, 1, 8 p., 014013.

    Research output: Contribution to journalArticleScientificpeer-review

  6. Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

    Thomas, N., Watson, T. F., Metz, M., Boter, J. M., Dehollain Lorenzana, J. P., Droulers, G., Eenink, G., Li, R., Massa, L., Sabbagh, D., Samkharadze, N., Volk, C., Zwerver, A. M., Veldhorst, M., Scappucci, G. & Vandersypen, L. M. K., 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Rim, K. (ed.). Institute of Electrical and Electronics Engineers (IEEE), Vol. 2018-December. p. 6.3.1-6.3.4 8614624

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  7. Rent's rule and extensibility in quantum computing

    Franke, D. P., Clarke, J. S., Vandersypen, L. M. K. & Veldhorst, M., 2019, In : Microprocessors and Microsystems. 67, p. 1-7

    Research output: Contribution to journalArticleScientificpeer-review

  8. Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

    Sammak, A., Sabbagh, D., Hendrickx, N. W., Lodari, M., Paquelet Wuetz, B., Tosato, A., Yeoh, L. R., Veldhorst, M., Scappucci, G. & More Authors, 2019, In : Advanced Functional Materials. 29, 14, 8 p., 1807613.

    Research output: Contribution to journalArticleScientificpeer-review

  9. Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots

    Eenink, H. G. J., Petit, L., Lawrie, W. I. L., Clarke, J. S., Vandersypen, L. M. K. & Veldhorst, M., 2019, In : Nano Letters. 19, 12, p. 8653-8657

    Research output: Contribution to journalArticleScientificpeer-review

  10. 2018
  11. Gate-controlled quantum dots and superconductivity in planar germanium

    Hendrickx, N. W., Franke, D. P., Sammak, A., Kouwenhoven, M., Sabbagh, D., Yeoh, L., Li, R., Tagliaferri, M. L. V., Virgilio, M., Capellini, G., Scappucci, G. & Veldhorst, M., 1 Dec 2018, In : Nature Communications. 9, 1, 2835.

    Research output: Contribution to journalArticleScientificpeer-review

  12. Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

    Liles, S. D., Li, R., Yang, C. H., Hudson, F. E., Veldhorst, M., Dzurak, A. S. & Hamilton, A. R., Dec 2018, In : Nature Communications. 9, 1, 3255.

    Research output: Contribution to journalArticleScientificpeer-review

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