1. A 28W -108.9dB/-102.2dB THD/THD+N Hybrid ΔΣ-PWM Class-D Audio Amplifier with 91% Peak Efficiency and Reduced EMI Emission

    Karmakar, S., Zhang, H., Van Veldhoven, R., Breems, L., Berkhout, M., Fan, Q. & Makinwa, K. A. A., 2020, 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020. IEEE, p. 350-352 3 p. 9063001

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  2. A 3.2mW SAR-assisted CTΔΣ ADC with 77.5dB SNDR and 40MHz BW in 28nm CMOS

    Cenci, P., Bolatkale, M., Rutten, R., Ganzerli, M., Lassche, G., Makinwa, K. & Breems, L., 2019, 2019 Symposium on VLSI Circuits: Digest of technical papers. IEEE, p. C230-C231 2 p. 8778176

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  3. A 32x32 50ps resolution 10 bit time to digital converter array in 130nm CMOS for time correlated imaging

    Richardson, J., Walker, R., Grant, L., Stoppa, D., Borghetti, F., Charbon, E., Gersbach, MA. & Henderson, RK., 2009, IISW 2009, International Image Sensor Workshop. Theuwissen, A. & e.a. (eds.). Bergen, Norway: ImageSensors Inc., p. 1-4 4 p.

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  4. A 4.5 nV/√Hz Capacitively Coupled Continuous-Time Sigma-Delta Modulator with an Energy-Efficient Chopping Scheme

    Jiang, H., Ligouras, C., Nihtianov, S. & Makinwa, K., 2018, In : IEEE Solid State Circuits Letters. 1, 1, p. 18-21 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  5. A 5800 μm2 Resistor-based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °C (3σ) from −50 to 105 °C in 65 nm CMOS

    Lee, Y., Choi, W., Kim, T., Song, S., Makinwa, K. & Chae, Y., 2019, In : IEEE Journal of Solid State Circuits. 2, 9, p. 67 - 70 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  6. A 5800-μm2 Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) from -50 °c to 105 °c in 65-nm CMOS

    Lee, Y., Choi, W., Kim, T., Song, S., Makinwa, K. A. A. & Chae, Y., 1 Sep 2019, ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE), p. 67-70 4 p. 8902650. (IEEE Solid State Circuits Letters; vol. 2, no. 9).

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  7. A 66-dB SNDR Pipelined Split-ADC in 40-nm CMOS Using a Class-AB Residue Amplifier

    Akter, S., Sehgal, R., van der Goes, F., Makinwa, K. A. A. & Bult, K., 2018, In : IEEE Journal of Solid-State Circuits. 53, 10, p. 2939-2950 12 p.

    Research output: Contribution to journalArticleScientificpeer-review

  8. A 6800-μ m2 Resistor-Based Temperature Sensor with ±0.35 °c (3σ) Inaccuracy in 180-nm CMOS

    Angevare, J. A. & Makinwa, K. A. A., 2019, In : IEEE Journal of Solid-State Circuits. 54, 10, p. 2649-2657 9 p., 8753607.

    Research output: Contribution to journalArticleScientificpeer-review

  9. A 6800-μm2 Resistor-Based Temperature Sensor in 180-nm CMOS

    Angevare, J. & Makinwa, K. A. A., 2018, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Kuroda, T. (ed.). Institute of Electrical and Electronics Engineers (IEEE), p. 43-46 4 p. 8579332

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  10. A 9.1 mW inductive displacement-to-digital converter with 1.85 nm resolution

    Chaturvedi, V., Vogel, J. G., Makinwa, K. A. A. & Nihtianov, S., 2017, Digest of Technical Papers - 2017 Symposium on VLSI Circuits. Piscataway, NJ: IEEE, p. C80-C81 2 p.

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

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