1. 2017
  2. A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

    Pan, S., Luo, Y., Heidary Shalmany, S. & Makinwa, K. A. A., 1 Feb 2017, 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017: Digest of Technical Papers. Fujino, L. C. (ed.). Danvers, MA: IEEE, p. 158-160 3 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  3. A 0.6nm Resolution 19.8mW Eddy-Current Displacement Sensor Interface with 126MHz Excitation

    Chaturvedi, V., Nabavi, M. R., Vogel, J., Makinwa, K. A. A. & Nihtianov, S., 2017, 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017: Digest of Technical Papers. Fujino, L. C. (ed.). Danvers, MA: IEEE, Vol. 60. p. 174-175 2 p. 7870317

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  4. A 10kHz-BW 93.7dB-SNR Chopped ΔΣ ADC with 30V Input CM Range and 115dB CMRR at 10kHz

    Xu, L., Huijsing, J. H. & Makinwa, K. A. A., 2017, 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC): Proceedings of Technical Papers. Danvers, MA: IEEE, p. 49-52 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  5. A 12μW NPN-based Temperature Sensor with a 18.4pJ.K2 FOM in 0.18μm BCD CMOS

    Xu, L., Huijsing, J. H. & Makinwa, K. A. A., 2017, Proceedings - 2017 7th International Workshop on Advances in Sensors and Interfaces, IWASI 2017. Danvers, MA: IEEE, p. 180-182 3 p. 7974246

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  6. A 28 nm 2 GS/s 5-b single-channel SAR ADC with gm-boosted StrongARM comparator

    Cenci, P., Bolatkale, M., Rutten, R., Lassche, G., Makinwa, K. & Breems, L., 2017, 43rd IEEE European Solid-State Circuits Conference (ESSCIRC 2017). Piscataway, NJ: IEEE, p. 171-174 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  7. A 9.1 mW inductive displacement-to-digital converter with 1.85 nm resolution

    Chaturvedi, V., Vogel, J. G., Makinwa, K. A. A. & Nihtianov, S., 2017, Digest of Technical Papers - 2017 Symposium on VLSI Circuits. Piscataway, NJ: IEEE, p. C80-C81 2 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  8. A BJT-Based Temperature-to-Digital Converter with ±60 mK (3 σ) Inaccuracy From-55 °c to +125 °c in 0.16-μm CMOS

    Yousefzadeh, B., Heidary Shalmany, S. & Makinwa, K. A. A., 2017, In : IEEE Journal of Solid State Circuits. 52, 4, p. 1044-1052 9 p., 7829254.

    Research output: Contribution to journalArticleScientificpeer-review

  9. A BJT-based temperature sensor with a packaging-robust inaccuracy of ±0.3°C (3s) from -55°C to +125°C after heater-assisted voltage calibration

    Yousefzadeh, B. & Makinwa, K. A. A., 2017, 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017: Digest of Technical Papers. Fujino, L. C. (ed.). Danvers, MA: IEEE, Vol. 60. p. 162-163 2 p. 7870311

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  10. A CMOS Readout Circuit for Resistive Transducers Based on Algorithmic Resistance and Power Measurement

    Cai, Z., Rueda Guerrero, L. E., Louwerse, A. M. R., Suy, H., van Veldhoven, R., Makinwa, K. A. A. & Pertijs, M. A. P., 2017, In : IEEE Sensors Journal. 17, 23, p. 7917-7927 11 p.

    Research output: Contribution to journalArticleScientificpeer-review

  11. A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM

    Pan, S., Jiang, H. & Makinwa, K. A. A., 2017, Digest of Technical Papers - 2017 Symposium on VLSI Circuits. Piscataway, NJ: IEEE, p. C82-C83 2 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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