1. 2019
  2. A new class of efficient randomized benchmarking protocols

    Helsen, J., Xue, X., Vandersypen, L. M. K. & Wehner, S., 2019, In : NPJ Quantum Information. 5, 1, 9 p., 71.

    Research output: Contribution to journalArticleScientificpeer-review

  3. Ab initio exact diagonalization simulation of the Nagaoka transition in quantum dots

    Wang, Y., Dehollain, J. P., Liu, F., Mukhopadhyay, U., Rudner, M. S., Vandersypen, L. M. K. & Demler, E., 2019, In : Physical Review B. 100, 15, 14 p., 155133.

    Research output: Contribution to journalArticleScientificpeer-review

  4. Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

    Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S. & Vandersypen, L. M. K., 2019, In : Physical Review X. 9, 2, 12 p., 021011.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Electrode-induced lattice distortions in GaAs multi-quantum-dot arrays

    Pateras, A., Carnis, J., Mukhopadhyay, U., Richard, M. I., Leake, S. J., Schülli, T. U., Reichl, C., Wegscheider, W., Dehollain, J. P., Vandersypen, L. M. K. & Evans, P. G., 2019, In : Journal of Materials Research. 34, 8, p. 1291-1301 11 p.

    Research output: Contribution to journalArticleScientificpeer-review

  6. Impact of Classical Control Electronics on Qubit Fidelity

    Van Dijk, J. P. G., Kawakami, E., Schouten, R. N., Veldhorst, M., Vandersypen, L. M. K., Babaie, M., Charbon, E. & Sebastiano, F., 2019, In : Physical Review Applied. 12, 4, 20 p., 044054.

    Research output: Contribution to journalArticleScientificpeer-review

  7. Loading a quantum-dot based “Qubyte” register

    Volk, C., Zwerver, A. M. J., Mukhopadhyay, U., Eendebak, P. T., van Diepen, C. J., Dehollain, J. P., Hensgens, T., Fujita, T., Vandersypen, L. M. K. & More Authors, 2019, In : NPJ Quantum Information. 5, 1, 29.

    Research output: Contribution to journalArticleScientificpeer-review

  8. Quantum Transport Properties of Industrial Si 28 / Si O2 28

    Sabbagh, D., Massa, L., Amitonov, S. V., Boter, J. M., Droulers, G., Eenink, H. G. J., Veldhorst, M., Vandersypen, L. M. K. & Scappucci, G., 2019, In : Physical Review Applied. 12, 1, 8 p., 014013.

    Research output: Contribution to journalArticleScientificpeer-review

  9. Quantum simulation and optimization in hot quantum networks

    Schuetz, M. J. A., Vermersch, B., Kirchmair, G., Vandersypen, L. M. K., Cirac, J. I., Lukin, M. D. & Zoller, P., 2019, In : Physical Review B. 99, 24, 8 p., 241302.

    Research output: Contribution to journalArticleScientificpeer-review

  10. Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

    Thomas, N., Watson, T. F., Metz, M., Boter, J. M., Dehollain Lorenzana, J. P., Droulers, G., Eenink, G., Li, R., Massa, L., Sabbagh, D., Samkharadze, N., Volk, C., Zwerver, A. M., Veldhorst, M., Scappucci, G. & Vandersypen, L. M. K., 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Rim, K. (ed.). Institute of Electrical and Electronics Engineers Inc., Vol. 2018-December. p. 6.3.1-6.3.4 8614624

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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