1. 2019
  2. A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

    Wang, S., Tan, C., Wang, L., Luo, H., Zhang, G. & Chen, X., 1 Mar 2019, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. IEEE, p. 410-412 3 p. 8731110

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  3. Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD

    Luo, H. C., Wang, L. M., Wang, S. G., Tan, C. J., Zheng, K., Zhang, G. Q., Tao, L. Q. & Chen, X. P., 2019, In : IEEE Transactions on Electron Devices. 66, 5, p. 2295-2300 6 p., 8674768.

    Research output: Contribution to journalArticleScientificpeer-review

  4. Tunable electronic and optical properties of the WS2/IGZO heterostructure via an external electric field and strain: A theoretical study

    Tang, H., Tan, C., Yang, H., Zheng, K., Li, Y., Ye, H., Chen, X., Fan, X., Ren, T. & Zhang, G., 2019, In : Physical Chemistry Chemical Physics. 21, 27, p. 14713-14721 9 p.

    Research output: Contribution to journalArticleScientificpeer-review

ID: 46076781