Research output

  1. Characterisation of an n-type Si/SiGe modulation doped field-effect transistor

    Research output: Contribution to journalArticleScientificpeer-review

  2. Chemical vs. Physical factors in dry etching induced damage in the Si/GexSi1-x system

    Research output: Contribution to journalArticleScientificpeer-review

  3. Gas Source MBE growth of Si/SiGe device materials

    Research output: Contribution to journalArticleScientificpeer-review

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ID: 311726