1. 2020
  2. Quantum dot arrays in silicon and germanium

    Lawrie, W. I. L., Eenink, H. G. J., Hendrickx, N. W., Boter, J. M., Petit, L., Amitonov, S. V., Lodari, M., Paquelet Wuetz, B., Volk, C., Philips, S. G. J., Droulers, G., Kalhor, N., Van Riggelen, F., Brousse, D., Sammak, A., Vandersypen, L. M. K., Scappucci, G. & Veldhorst, M., 24 Feb 2020, In : Applied Physics Letters. 116, 8, 9 p., 080501.

    Research output: Contribution to journalReview articleScientificpeer-review

  3. A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers

    Patra, B., Van Dijk, J. P. G., Corna, A., Xue, X., Samkharadze, N., Sammak, A., Scappucci, G., Veldhorst, M., Vandersypen, L. M. K., Babaie, M., Sebastiano, F. & Charbon, E., 2020, 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020. Institute of Electrical and Electronics Engineers (IEEE), Vol. 2020-February. p. 304-306 3 p. 9063109

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  4. Fast two-qubit logic with holes in germanium

    Hendrickx, N. W., Franke, D. P., Sammak, A., Scappucci, G. & Veldhorst, M., 2020, In : Nature. 577, 7791, p. 487-491 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  5. 2019
  6. Voltage References for the Ultra-Wide Temperature Range from 4.2K to 300K in 40-nm CMOS

    Van Staveren, J., Garcia Almudever, C., Scappucci, G., Veldhorst, M., Babaie, M., Charbon, E. & Sebastiano, F., 1 Sep 2019, ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference. Institute of Electrical and Electronics Engineers (IEEE), p. 37-40 4 p. 8902861

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  7. A sparse spin qubit array with integrated control electronics

    Boter, J. M., Dehollain, J. P., Van DIjk, J. P. G., Hensgens, T., Versluis, R., Clarke, J. S., Veldhorst, M., Sebastiano, F. & Vandersypen, L. M. K., 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Takayanagi, M. (ed.). Institute of Electrical and Electronics Engineers (IEEE), Vol. 2019-December. 4 p. 8993570

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  8. Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium

    Hendrickx, N. W., Tagliaferri, M. L. V., Kouwenhoven, M., Li, R., Franke, D. P., Sammak, A., Brinkman, A., Scappucci, G. & Veldhorst, M., 2019, In : Physical Review B. 99, 7, 6 p., 075435.

    Research output: Contribution to journalArticleScientificpeer-review

  9. High Volume Electrical Characterization of Semiconductor Qubits

    Pillarisetty, R., George, H. C., Watson, T., Lampert, L., Krähenmann, T., Zwerver, A. M., Veldhorst, M., Scappucci, G., Vandersypen, L. M. K. & More Authors, 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers (IEEE), Vol. 2019-December. 4 p. 8993587

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  10. Impact of Classical Control Electronics on Qubit Fidelity

    Van Dijk, J. P. G., Kawakami, E., Schouten, R. N., Veldhorst, M., Vandersypen, L. M. K., Babaie, M., Charbon, E. & Sebastiano, F., 2019, In : Physical Review Applied. 12, 4, 20 p., 044054.

    Research output: Contribution to journalArticleScientificpeer-review

  11. Light effective hole mass in undoped Ge/SiGe quantum wells

    Lodari, M., Tosato, A., Sabbagh, D., Schubert, M. A., Capellini, G., Sammak, A., Veldhorst, M. & Scappucci, G., 2019, In : Physical Review B. 100, 4, 4 p., 041304.

    Research output: Contribution to journalArticleScientificpeer-review

  12. Quantum Transport Properties of Industrial Si 28 / Si O2 28

    Sabbagh, D., Massa, L., Amitonov, S. V., Boter, J. M., Droulers, G., Eenink, H. G. J., Veldhorst, M., Vandersypen, L. M. K. & Scappucci, G., 2019, In : Physical Review Applied. 12, 1, 8 p., 014013.

    Research output: Contribution to journalArticleScientificpeer-review

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