Research profile

Ryoichi Ishihara (1967) is an associate professor in Electrical Engineering, specialized in thin-film material, devices and 3D integration. Ishihara received the PhD in Physical Electronics from Tokyo Institute of Technology (1996). After moving to TU Delft in the same year, he has established new activity of large area electronics using thin-film transistors (TFTs). He is also a visiting professor of Japan Advanced Institute of Science and Technology since 2013.

Highlights of Ishihara’s career include the first demonstration of TFTs inside large Si grain (1996), the location- and orientation-control of Si crystals (2000, 2006) by laser crystallization, the monolithic 3D-IC using single-grain TFTs (2008), the ultra-high mobility Ge TFTs (2010), and carbon nanotube vertical interconnect via’s (2013), and the first solution processed flexible Si TFTs on a plastic (2013). His current focus in QuTech is on fabrication of scalable qubit and advanced packaging technology for integration of qubit.

Research output

  1. Diamond colour centers for quantum internet and sensors

    Research output: Contribution to journalReview articleScientific

  2. (Invited) Printed Poly-Si TFTs on Paper for Beyond Plastic Electronics

    Research output: Contribution to journalConference articleScientific

  3. Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Activities

  1. Solution-processed LTPS on paper

    Activity: Talk or presentationTalk or presentation at a workshop, seminar, course or other meeting

  2. Superconducting Carbon Nanotubes composite as Vertical Interconnect for Qubit Integration at Cryogenic Temperature

    Activity: Talk or presentationTalk or presentation at a workshop, seminar, course or other meeting

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ID: 115751