1. 2018
  2. Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material

    Alfaro, J. A., Sberna, P. M., Silvestri, C., Mastrangeli, M., Ishihara, R. & Sarro, P. M., 2018, 2018 IEEE Micro Electro Mechanical Systems, MEMS 2018. Piscataway, NJ: IEEE, Vol. 2018-January. p. 547-550 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  3. 2017
  4. Analysis of polydihydrosilane crystallization by excimer laser annealing

    Trifunovic, M., Sberna, P., Shimoda, T. & Ishihara, R., 30 Sep 2017, In : Thin Solid Films. 638, p. 73-80 8 p.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

    Vandersypen, L. M. K., Bluhm, H., Clarke, J. S., Dzurak, A. S., Ishihara, R., Morello, A., Reilly, D. J., Schreiber, L. R. & Veldhorst, M., 6 Sep 2017, In : NPJ Quantum Information. 3, 1, p. 34 10 p.

    Research output: Contribution to journalArticleScientificpeer-review

  6. Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes

    Sberna, P., Trifunovic, M. & Ishihara, R., 11 Jun 2017, In : ACS Sustainable Chemistry and Engineering. 5, 7, p. 5642-5645

    Research output: Contribution to journalArticleScientificpeer-review

  7. A 2.4 GHz to 27 MHz non-linear RFID topology in flexible electronics

    Gentile, G. & Ishihara, R., 2017, IET Conference Publications. CP732 ed. Institution of Engineering and Technology, Vol. 2017. p. 1-5 5 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  8. Manufacture a submicron structure using a liquid precursor

    van der Zwan, M., Ishihara, R. & Trifunovic, M., 2017, IPC No. H01L, Patent No. US 9.620.625, Priority date 29 Jan 2013

    Research output: PatentOther research output

  9. Method of forming silicon on a substrate

    van der Zwan, M., Ishihara, R. & Trifunovic, M., 2017, IPC No. C30B; H01L, Patent No. US 9.595.437, Priority date 26 Apr 2013

    Research output: PatentOther research output

  10. Polycrystalline Silicon TFTs on a Paper Substrate Using Solution-Processed Silicon

    Trifunovic, M., Sberna, P. M., Shimoda, T. & Ishihara, R., 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Fay, P. (ed.). Piscataway, NJ, USA: IEEE, p. 1-4 7838527

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  11. Solution-based polycrystalline silicon transistors produced on a paper substrate

    Trifunovic, M., Shimoda, T., Ishihara, R. & Sberna, P., 2017, In : npj Flexible Electronics. 1, 12, 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  12. 2016
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