1. 2020
  2. The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

    Sokolovskij, R., Zhang, J., Zheng, H., Li, W., Jiang, Y., Yang, G., Yu, H., Sarro, P. M. & Zhang, G., 2020, In : IEEE Sensors Journal. 20, 16, p. 8947-8955 9 p., 9063506.

    Research output: Contribution to journalArticleScientificpeer-review

  3. 2019
  4. Suspended AlGaN/GaN HEMT NO2 Gas Sensor Integrated with Micro-heater

    Sun, J., Sokolovskij, R., Iervolino, E., Liu, Z., Sarro, P. M. & Zhang, G., 1 Dec 2019, In : Journal of Microelectromechanical Systems. 28, 6, p. 997-1004 8 p., 8856274.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater

    Sun, J., Sokolovskij, R., Iervolino, E., Santagata, F., Liu, Z., Sarro, P. M. & Zhang, G., 2019, In : IEEE Transactions on Electron Devices. 66, 10, p. 4373-4379 7 p.

    Research output: Contribution to journalArticleScientificpeer-review

  6. Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

    Zhang, J., Sokolovskij, R., Chen, G., Zhu, Y., Qi, Y., Lin, X., Li, W., Zhang, G. Q., Jiang, Y-L. & Yu, H., 2019, In : Sensors and Actuators, B: Chemical. 280, p. 138-143 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  7. Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers

    Wu, J., Lei, S., Cheng, W-C., Sokolovskij, R., Wang, Q., Xia, G. M. & Yu, H., 2019, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 37, 6, p. 1-4 4 p., 060401.

    Research output: Contribution to journalArticleScientificpeer-review

  8. Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction

    Tang, H., Li, Y., Sokolovskij, R., Sacco, L., Zheng, H., Ye, H., Yu, H., Fan, X., Zhang, G. & More Authors, 2019, In : ACS Applied Materials and Interfaces. 11, 43, p. 40850-40859 10 p.

    Research output: Contribution to journalArticleScientificpeer-review

  9. 2018
  10. AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

    Sokolovskij, R., Zhang, J., Jiang, Y., Chen, G., Zhang, G. Q. & Yu, H., 2018, ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings. Jiang, Y-L., Tang, T-A. & Ye, F. (eds.). Piscataway, NJ: IEEE, p. 1-4 4 p. 8564904

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  11. Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates

    Li, W., Zhang, J., Sokolovskij, R., Zhu, Y., Qi, Y., Lin, X., Wu, J., Jiang, L. & Yu, H., 2018, 2018 18th International Workshop on Junction Technology, IWJT-2018: Extended Abstracts. Jiang, Y-L., Qu, X-P., Ru, G-P. & Li, B-Z. (eds.). Piscataway, NJ: IEEE, Vol. 2018-January. p. 1-4 4 p.

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

  12. Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

    Sokolovskij, R., Zhang, J., Iervolino, E., Zhao, C., Santagata, F., Wang, F., Yu, H., Sarro, P. M. & Zhang, G. Q., 2018, In : Sensors and Actuators, B: Chemical. 274, p. 636-644 9 p.

    Research output: Contribution to journalArticleScientificpeer-review

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