This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves ±1.4°C (3σ) inaccuracy from -40 to 125°C, which is a 5× improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to ±0.75°C (3σ) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 μm2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ΔΣ ADC.
Original languageEnglish
Title of host publication2016 IEEE International Solid-State Circuits Conference, ISSCC 2016
Subtitle of host publicationDigest of Technical Papers
EditorsLaura C. Fujino
Place of PublicationDanvers, MA
Number of pages2
ISBN (Electronic)978-1-4673-9467-3
ISBN (Print)978-1-4673-9466-6
Publication statusPublished - 25 Feb 2016
Event2016 IEEE International Solid-State Circuits Conference, ISSCC 2016 - San Francisco, CA, United States
Duration: 31 Jan 20164 Feb 2016


Conference2016 IEEE International Solid-State Circuits Conference, ISSCC 2016
Abbreviated titleISSCC 2016
CountryUnited States
CitySan Francisco, CA
Internet address

    Research areas

  • Temperature sensors, Radiation detectors, Temperature measurement, CMOS integrated circuits, Monitoring

ID: 11340418