Abstract
This work presents a thermal diffusivity (TD) sensor realized in nanometer (40nm) CMOS that demonstrates that the performance of such sensors continues to improve with scaling. Without trimming, the sensor achieves ±1.4°C (3σ) inaccuracy from -40 to 125°C, which is a 5× improvement over previous (non-TD) sensors intended for thermal monitoring. This improves to ±0.75°C (3σ) after a single-point trim, a level of accuracy that previously would have required two-point trimming. Furthermore, it operates from supply voltages as low as 0.9V, and occupies only 1650 μm2, making it one of the smallest smart temperature sensors reported to date. These advances are enabled by the use of a phase-calibration scheme and a highly digital phase-domain ΔΣ ADC.
Original language | English |
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Title of host publication | 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016 |
Subtitle of host publication | Digest of Technical Papers |
Editors | Laura C. Fujino |
Place of Publication | Danvers, MA |
Publisher | IEEE |
Pages | 206-207 |
Number of pages | 2 |
ISBN (Electronic) | 978-1-4673-9467-3 |
ISBN (Print) | 978-1-4673-9466-6 |
DOIs | |
Publication status | Published - 25 Feb 2016 |
Event | 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016 - San Francisco, CA, United States Duration: 31 Jan 2016 → 4 Feb 2016 http://isscc.org/index.html |
Conference
Conference | 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016 |
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Abbreviated title | ISSCC 2016 |
Country/Territory | United States |
City | San Francisco, CA |
Period | 31/01/16 → 4/02/16 |
Internet address |
Keywords
- Temperature sensors
- Radiation detectors
- Temperature measurement
- CMOS integrated circuits
- Monitoring