DOI

We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.
Original languageEnglish
Title of host publicationDigest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
EditorsWilliam Johnson Chappell
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages199-202
Number of pages4
ISBN (Print)978-1-4244-1855-8
DOIs
Publication statusPublished - 2008
Event2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Orlando, United States
Duration: 23 Jan 200825 Jan 2008

Conference

Conference2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
CountryUnited States
CityOrlando
Period23/01/0825/01/08

ID: 3836704