Standard

50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes. / Gentile, G.; Buisman, K.; Aknoukh, A.; de Vreede, L.C.N.; Rejaei, B; Nanver, L.K.

Digest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. ed. / William Johnson Chappell. Piscataway, NJ : IEEE, 2008. p. 199-202.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Gentile, G, Buisman, K, Aknoukh, A, de Vreede, LCN, Rejaei, B & Nanver, LK 2008, 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes. in W Johnson Chappell (ed.), Digest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. IEEE, Piscataway, NJ, pp. 199-202, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Orlando, United States, 23/01/08. https://doi.org/10.1109/SMIC.2008.56

APA

Gentile, G., Buisman, K., Aknoukh, A., de Vreede, L. C. N., Rejaei, B., & Nanver, L. K. (2008). 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes. In W. Johnson Chappell (Ed.), Digest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 199-202). Piscataway, NJ: IEEE. https://doi.org/10.1109/SMIC.2008.56

Vancouver

Gentile G, Buisman K, Aknoukh A, de Vreede LCN, Rejaei B, Nanver LK. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes. In Johnson Chappell W, editor, Digest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Piscataway, NJ: IEEE. 2008. p. 199-202 https://doi.org/10.1109/SMIC.2008.56

Author

Gentile, G. ; Buisman, K. ; Aknoukh, A. ; de Vreede, L.C.N. ; Rejaei, B ; Nanver, L.K. / 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes. Digest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. editor / William Johnson Chappell. Piscataway, NJ : IEEE, 2008. pp. 199-202

BibTeX

@inproceedings{909d6effb2254259a293eb7feeaa8bac,
title = "50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes",
abstract = "We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.",
author = "G. Gentile and K. Buisman and A. Aknoukh and {de Vreede}, L.C.N. and B Rejaei and L.K. Nanver",
year = "2008",
doi = "10.1109/SMIC.2008.56",
language = "English",
isbn = "978-1-4244-1855-8",
pages = "199--202",
editor = "{Johnson Chappell}, {William }",
booktitle = "Digest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
publisher = "IEEE",
address = "United States",

}

RIS

TY - GEN

T1 - 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes

AU - Gentile, G.

AU - Buisman, K.

AU - Aknoukh, A.

AU - de Vreede, L.C.N.

AU - Rejaei, B

AU - Nanver, L.K.

PY - 2008

Y1 - 2008

N2 - We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.

AB - We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.

U2 - 10.1109/SMIC.2008.56

DO - 10.1109/SMIC.2008.56

M3 - Conference contribution

SN - 978-1-4244-1855-8

SP - 199

EP - 202

BT - Digest of papers - 2008 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

A2 - Johnson Chappell, William

PB - IEEE

CY - Piscataway, NJ

ER -

ID: 3836704