A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

Woojun  Choi; Yong-Tae Lee; Seonhong  Kim; Sanghoon  Lee; Jieun  Jang; Junhyun  Chun; Kofi A.A. Makinwa; Youngcheol Chae

doi:10.1109/ISSCC.2018.8310314

A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

Woojun Choi, Yong-Tae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, Junhyun Chun, Kofi A.A. Makinwa, Youngcheol Chae

Microelectronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

19 Citations (Scopus)

17 Downloads (Pure)

Abstract

In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm ² ).

Original language	English
Title of host publication	2018 IEEE International Solid-State Circuits Conference, ISSCC 2018
Subtitle of host publication	Digest of Technical Papers
Editors	L.C. Fujino
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	322-324
Number of pages	3
Volume	61
ISBN (Electronic)	978-1-5090-4940-0
ISBN (Print)	978-1-5386-2227-8
DOIs	https://doi.org/10.1109/ISSCC.2018.8310314
Publication status	Published - 2018
Event	65th IEEE International Solid-State Circuits Conference, ISSCC 2018 - San Francisco, United States Duration: 11 Feb 2018 → 15 Feb 2018

Conference

Conference	65th IEEE International Solid-State Circuits Conference, ISSCC 2018
Country/Territory	United States
City	San Francisco
Period	11/02/18 → 15/02/18

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

Temperature sensors
Frequency locked loops
Temperature measurement
Jitter
Phase frequency detector

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ISSCC.2018.8310314

08310314Final published version, 927 KB

Cite this

Choi, W., Lee, Y.-T., Kim, S., Lee, S., Jang, J., Chun, J., Makinwa, K. A. A., & Chae, Y. (2018). A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. In L. C. Fujino (Ed.), 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018: Digest of Technical Papers (Vol. 61, pp. 322-324). IEEE. https://doi.org/10.1109/ISSCC.2018.8310314

@inproceedings{0bd07d4e5c9b46b4bb452852b20ebe8b,

title = "A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS",

abstract = "In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm 2 ).",

keywords = "Temperature sensors , Frequency locked loops , Temperature measurement , Jitter , Phase frequency detector ",

author = "Woojun Choi and Yong-Tae Lee and Seonhong Kim and Sanghoon Lee and Jieun Jang and Junhyun Chun and Makinwa, {Kofi A.A.} and Youngcheol Chae",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ; 65th IEEE International Solid-State Circuits Conference, ISSCC 2018 ; Conference date: 11-02-2018 Through 15-02-2018",

year = "2018",

doi = "10.1109/ISSCC.2018.8310314",

language = "English",

isbn = "978-1-5386-2227-8 ",

volume = "61",

pages = "322--324",

editor = "L.C. Fujino",

booktitle = "2018 IEEE International Solid-State Circuits Conference, ISSCC 2018",

publisher = "IEEE",

address = "United States",

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Choi, W, Lee, Y-T, Kim, S, Lee, S, Jang, J, Chun, J, Makinwa, KAA & Chae, Y 2018, A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. in LC Fujino (ed.), 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018: Digest of Technical Papers. vol. 61, IEEE, Piscataway, NJ, pp. 322-324, 65th IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, United States, 11/02/18. https://doi.org/10.1109/ISSCC.2018.8310314

A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. / Choi, Woojun; Lee, Yong-Tae; Kim, Seonhong et al.
2018 IEEE International Solid-State Circuits Conference, ISSCC 2018: Digest of Technical Papers. ed. / L.C. Fujino. Vol. 61 Piscataway, NJ: IEEE, 2018. p. 322-324.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

AU - Choi, Woojun

AU - Lee, Yong-Tae

AU - Kim, Seonhong

AU - Lee, Sanghoon

AU - Jang, Jieun

AU - Chun, Junhyun

AU - Makinwa, Kofi A.A.

AU - Chae, Youngcheol

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2018

Y1 - 2018

N2 - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm 2 ).

AB - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm 2 ).

KW - Temperature sensors

KW - Frequency locked loops

KW - Temperature measurement

KW - Jitter

KW - Phase frequency detector

U2 - 10.1109/ISSCC.2018.8310314

DO - 10.1109/ISSCC.2018.8310314

M3 - Conference contribution

SN - 978-1-5386-2227-8

VL - 61

SP - 322

EP - 324

BT - 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018

A2 - Fujino, L.C.

PB - IEEE

CY - Piscataway, NJ

T2 - 65th IEEE International Solid-State Circuits Conference, ISSCC 2018

Y2 - 11 February 2018 through 15 February 2018

ER -

A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

Abstract

Conference

Bibliographical note

Keywords

UN SDGs

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