A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS

Nandish Mehta; Johan Huijsing; Vladimir Stojanović

doi:10.1109/VLSIC.2018.8502397

A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS

Nandish Mehta, Johan Huijsing, Vladimir Stojanović

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Abstract

This paper presents a class-AB driver for high-fidelity audio. It attains high-linearity at low-power by using an improved output stage biasing technique and a new frequency compensation scheme. Designed in standard 65nm CMOS, the driver delivers 5I.2mW peak power to 16Ω 0.33nF load, while consuming 0.97mW. It achieves -101.4dB THD+N over full audio band, the lowest ever reported linearity among sub-milliwatt CMOS class-AB drivers. Compared to prior works, it has >12dB better linearity and >7x higher unity-gain bandwidth, resulting in 2.5x improvement in linearity FOM (=Peak Load Power/ (Quiescent Power × THD+N[%])).

Original language	English
Title of host publication	2018 Symposium on VLSI Circuits Digest of Technical Papers
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	235-236
Number of pages	2
Volume	2018-June
ISBN (Electronic)	978-1-5386-4214-6
DOIs	https://doi.org/10.1109/VLSIC.2018.8502397
Publication status	Published - 2018
Event	2018 Symposia on VLSI Technology and Circuits: 2018 VLSI Technology Symposium - 2018 VLSI Circuits - Hilton Hawaiian Village, Honolulu, United States Duration: 18 Jun 2018 → 22 Jun 2018

Conference

Conference	2018 Symposia on VLSI Technology and Circuits
Country/Territory	United States
City	Honolulu
Period	18/06/18 → 22/06/18

Keywords

Linearity
Distortion
Damping
Topology
Bandwidth
Voltage measurement
Capacitors

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10.1109/VLSIC.2018.8502397

Cite this

@inproceedings{2143b126383c4c04906542c2a17f3dd2,

title = "A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS",

abstract = "This paper presents a class-AB driver for high-fidelity audio. It attains high-linearity at low-power by using an improved output stage biasing technique and a new frequency compensation scheme. Designed in standard 65nm CMOS, the driver delivers 5I.2mW peak power to 16Ω 0.33nF load, while consuming 0.97mW. It achieves -101.4dB THD+N over full audio band, the lowest ever reported linearity among sub-milliwatt CMOS class-AB drivers. Compared to prior works, it has >12dB better linearity and >7x higher unity-gain bandwidth, resulting in 2.5x improvement in linearity FOM (=Peak Load Power/ (Quiescent Power × THD+N[%])).",

keywords = "Linearity, Distortion, Damping, Topology, Bandwidth, Voltage measurement, Capacitors",

author = "Nandish Mehta and Johan Huijsing and Vladimir Stojanovi{\'c}",

year = "2018",

doi = "10.1109/VLSIC.2018.8502397",

language = "English",

volume = "2018-June",

pages = "235--236",

booktitle = "2018 Symposium on VLSI Circuits Digest of Technical Papers",

publisher = "IEEE",

address = "United States",

note = "2018 Symposia on VLSI Technology and Circuits : 2018 VLSI Technology Symposium - 2018 VLSI Circuits ; Conference date: 18-06-2018 Through 22-06-2018",

}

A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS. / Mehta, Nandish; Huijsing, Johan; Stojanović, Vladimir.
2018 Symposium on VLSI Circuits Digest of Technical Papers. Vol. 2018-June Piscataway, NJ: IEEE, 2018. p. 235-236 8502397.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS

AU - Mehta, Nandish

AU - Huijsing, Johan

AU - Stojanović, Vladimir

PY - 2018

Y1 - 2018

N2 - This paper presents a class-AB driver for high-fidelity audio. It attains high-linearity at low-power by using an improved output stage biasing technique and a new frequency compensation scheme. Designed in standard 65nm CMOS, the driver delivers 5I.2mW peak power to 16Ω 0.33nF load, while consuming 0.97mW. It achieves -101.4dB THD+N over full audio band, the lowest ever reported linearity among sub-milliwatt CMOS class-AB drivers. Compared to prior works, it has >12dB better linearity and >7x higher unity-gain bandwidth, resulting in 2.5x improvement in linearity FOM (=Peak Load Power/ (Quiescent Power × THD+N[%])).

AB - This paper presents a class-AB driver for high-fidelity audio. It attains high-linearity at low-power by using an improved output stage biasing technique and a new frequency compensation scheme. Designed in standard 65nm CMOS, the driver delivers 5I.2mW peak power to 16Ω 0.33nF load, while consuming 0.97mW. It achieves -101.4dB THD+N over full audio band, the lowest ever reported linearity among sub-milliwatt CMOS class-AB drivers. Compared to prior works, it has >12dB better linearity and >7x higher unity-gain bandwidth, resulting in 2.5x improvement in linearity FOM (=Peak Load Power/ (Quiescent Power × THD+N[%])).

KW - Linearity

KW - Distortion

KW - Damping

KW - Topology

KW - Bandwidth

KW - Voltage measurement

KW - Capacitors

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U2 - 10.1109/VLSIC.2018.8502397

DO - 10.1109/VLSIC.2018.8502397

M3 - Conference contribution

AN - SCOPUS:85056903076

VL - 2018-June

SP - 235

EP - 236

BT - 2018 Symposium on VLSI Circuits Digest of Technical Papers

PB - IEEE

CY - Piscataway, NJ

T2 - 2018 Symposia on VLSI Technology and Circuits

Y2 - 18 June 2018 through 22 June 2018

ER -

A 1MW -101DB THD+N Class-AB High-Fidelity Headphone Driver in 65NM CMOS

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Keywords

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