This paper presents the most accurate BJT-based CMOS temperature-to-digital converter (TDC) ever reported, with an inaccuracy of ±60mK (3σ) from -70°C to 125°C. This is 2× better than the state-of-the-art, despite being implemented in a process (160nm) that only offers low-βF (<;5) PNPs. It is also the most energy-efficient ever reported, with a resolution FOM of 7.3pJ°C2. This level of performance is achieved by an improved βF-compensation scheme, the use of dynamic error correction techniques to suppress non-BJT related errors and the use of an energy-efficient zoom-ADC based on current-reuse OTAs. These techniques also result in very low power-supply sensitivity (12mK/V), thus maintaining TDC accuracy for supply voltages ranging from 1.5V to 2V.
Original languageEnglish
Title of host publication2016 IEEE Symposium on VLSI Circuits, VLSI-Circuits 2016
Subtitle of host publicationDigest of Technical Papers
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1-2
Number of pages2
ISBN (Electronic)978-1-5090-0635-9
ISBN (Print)978-1-5090-0636-6
DOIs
Publication statusPublished - Jun 2016
Event30th IEEE Symposium on VLSI Circuits, VLSI Circuits 2016 - Honolulu, United States
Duration: 14 Jun 201617 Jun 2016

Conference

Conference30th IEEE Symposium on VLSI Circuits, VLSI Circuits 2016
CountryUnited States
CityHonolulu
Period14/06/1617/06/16

    Research areas

  • Temperature measurement, Sensitivity, Voltage measurement, Energy efficiency, Substrates, Sensors, Mirrors

ID: 11340775