Abstract
This paper presents a CMOS image sensor with in-pixel nearly unity-gain pMOS transistor based source followers and optimized column-parallel amplifiers. The prototype sensor has been fabricated in a 0.18 μm CMOS process. By eliminating the body effect of the source follower transistor, the voltage gain for the pixel-level readout circuitry approaches unity. The use of a single-ended common-source cascode amplifier with ground rail regulation improves the PSRR of the column-parallel analog front-end circuitry and further the noise performance. Electrical characterization results show that the proposed pixel improves the conversion gain after the in-pixel source follower by 42% compared to that of the conventional structure. The prototype sensor with proposed readout architecture reaches a 1.1e- input-referred temporal noise with a column-level ×16 analog gain.
Original language | English |
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Title of host publication | 2016 IEEE Sensors Proceedings |
Editors | E. Fontana, C. Ruiz-Zamarreno |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 1-3 |
Number of pages | 3 |
ISBN (Electronic) | 978-1-4799-8287-5 |
ISBN (Print) | 978-1-4799-8288-2 |
DOIs | |
Publication status | Published - 2016 |
Event | IEEE Sensors 2016: 15th IEEE Sensors Conference - Caribe Royale All-Suite Hotel and Convention Center, Orlando, FL, United States Duration: 30 Oct 2016 → 2 Nov 2016 Conference number: 15 |
Conference
Conference | IEEE Sensors 2016 |
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Country/Territory | United States |
City | Orlando, FL |
Period | 30/10/16 → 2/11/16 |
Keywords
- CMOS image sensor
- source follower
- amplifier
- regulator
- noise