Documents

  • 11575955

    Final published version, 765 KB, PDF-document

DOI

  • Jing Xiao
  • Qi-Qin Wei
  • Daoguo Yang
  • Ping Zhang
  • Ning He
  • Guo Qi Zhang
  • Tian-Ling Ren
  • Xian-Ping Chen
The emerging field of nanophotonics requires plasmonic devices to be fully compatible with semiconductor fabrication techniques. However, very few feasible practical structures exist at present. Here, we propose a CMOS-compatible hybrid plasmonic slot waveguide (HPSW) with enhanced field confinement. Our simulation results show that the HPSW exhibits significantly enhanced field confinement as compared with the traditional low-index slot waveguides and the hybrid metal dielectric slot waveguides. By controlling the thicknesses of different layers, an optimized HPSW structure with a better tradeoff between field confinement and propagation length has been simultaneously achieved.
Original languageEnglish
Pages (from-to)456-458
Number of pages3
JournalIEEE Electron Device Letters
Volume37
Issue number4
DOIs
Publication statusPublished - 2016

    Research areas

  • multi-layer structure, Hybrid plasmonic slot waveguide, field confinement

ID: 11575955