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A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS. / Choi, Woojun; Lee, Yongtae; Kim, Seonhong; Lee, Sanghoon; Jang, Jieun ; Chun, Junhyun ; Makinwa, Kofi A.A.; Chae, Youngcheol.

In: IEEE Journal of Solid-State Circuits, Vol. 53, No. 12, 2018, p. 3356-3367.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Choi, W, Lee, Y, Kim, S, Lee, S, Jang, J, Chun, J, Makinwa, KAA & Chae, Y 2018, 'A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS', IEEE Journal of Solid-State Circuits, vol. 53, no. 12, pp. 3356-3367. https://doi.org/10.1109/JSSC.2018.2871622

APA

Choi, W., Lee, Y., Kim, S., Lee, S., Jang, J., Chun, J., Makinwa, K. A. A., & Chae, Y. (2018). A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS. IEEE Journal of Solid-State Circuits, 53(12), 3356-3367. https://doi.org/10.1109/JSSC.2018.2871622

Vancouver

Author

Choi, Woojun ; Lee, Yongtae ; Kim, Seonhong ; Lee, Sanghoon ; Jang, Jieun ; Chun, Junhyun ; Makinwa, Kofi A.A. ; Chae, Youngcheol. / A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS. In: IEEE Journal of Solid-State Circuits. 2018 ; Vol. 53, No. 12. pp. 3356-3367.

BibTeX

@article{45f23e13cac145afaf866f26ffbdfea4,
title = "A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS",
abstract = "This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °C to 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².",
keywords = "Area-efficient, CMOS temperature sensor, energy-efficient, frequency-locked loop (FLL), poly-phase filter (PPF), resistor-based sensor, trimming, zero-crossing (ZC) detection",
author = "Woojun Choi and Yongtae Lee and Seonhong Kim and Sanghoon Lee and Jieun Jang and Junhyun Chun and Makinwa, {Kofi A.A.} and Youngcheol Chae",
note = "Accepted Author Manuscript",
year = "2018",
doi = "10.1109/JSSC.2018.2871622",
language = "English",
volume = "53",
pages = "3356--3367",
journal = "IEEE Journal of Solid State Circuits",
issn = "0018-9200",
publisher = "IEEE",
number = "12",

}

RIS

TY - JOUR

T1 - A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS

AU - Choi, Woojun

AU - Lee, Yongtae

AU - Kim, Seonhong

AU - Lee, Sanghoon

AU - Jang, Jieun

AU - Chun, Junhyun

AU - Makinwa, Kofi A.A.

AU - Chae, Youngcheol

N1 - Accepted Author Manuscript

PY - 2018

Y1 - 2018

N2 - This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °C to 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².

AB - This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °C to 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².

KW - Area-efficient

KW - CMOS temperature sensor

KW - energy-efficient

KW - frequency-locked loop (FLL)

KW - poly-phase filter (PPF)

KW - resistor-based sensor

KW - trimming

KW - zero-crossing (ZC) detection

UR - http://www.scopus.com/inward/record.url?scp=85054624122&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2018.2871622

DO - 10.1109/JSSC.2018.2871622

M3 - Article

AN - SCOPUS:85054624122

VL - 53

SP - 3356

EP - 3367

JO - IEEE Journal of Solid State Circuits

JF - IEEE Journal of Solid State Circuits

SN - 0018-9200

IS - 12

ER -

ID: 47250120