Abstract
This paper presents an area- and energy-efficient sensor readout circuit, which can precisely digitize temperature, capacitance and voltage. The three modes use only on-chip references and employ a shared zoom ADC based on SAR and ΔΣ conversion to save die area. Measurements on 24 samples from a single wafer show a temperature inaccuracy of ±0.2 °C (3σ) over the military temperature range (-55°C to 125°C). The voltage sensing shows an inaccuracy of ±0.5%. The sensor also offers 18.7-ENOB capacitance-to-digital conversion, which handles up to 3.8 pF capacitance with a 0.76 pJ/conv.-step energy-efficiency FoM. It occupies 0.33 mm in a 0.16 μm CMOS process and draws 4.6 μA current from a 1.8 V supply.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - 2017 Symposium on VLSI Circuits |
| Place of Publication | Piscataway, NJ |
| Publisher | IEEE |
| Pages | C78-C79 |
| Number of pages | 2 |
| ISBN (Electronic) | 978-4-86348-614-0 |
| ISBN (Print) | 978-4-86348-606-5 |
| DOIs | |
| Publication status | Published - 2017 |
| Event | 2017 Symposium on VLSI Technology and Circuits: 2017 VLSI Technology Symposium - 2017 VLSI Circuits Symposium - Kyoto, Japan Duration: 5 Jun 2017 → 8 Jun 2017 http://vlsisymposium.org/2017/ |
Conference
| Conference | 2017 Symposium on VLSI Technology and Circuits |
|---|---|
| Country/Territory | Japan |
| City | Kyoto |
| Period | 5/06/17 → 8/06/17 |
| Internet address |
Bibliographical note
C7-1Keywords
- temperature sensing
- voltage sensing
- capacitance-to-digital conversion
