Abstract
A low-cost, highly versatile, pulsed RF - pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.
Original language | English |
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Title of host publication | 2007 70th ARFTG Microwave Measurement Conference |
Subtitle of host publication | High Power RF Measurement Techniques, ARFTG 2007 |
Place of Publication | Piscataway, NJ, USA |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 33-36 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-5386-7295-2 |
ISBN (Print) | 978-1-5386-7296-9 |
DOIs | |
Publication status | Published - 2007 |
Event | 70th ARFTG Microwave Measurement Conference, ARFTG 2007 - Tempe, United States Duration: 29 Nov 2007 → 30 Nov 2007 |
Conference
Conference | 70th ARFTG Microwave Measurement Conference, ARFTG 2007 |
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Country/Territory | United States |
City | Tempe |
Period | 29/11/07 → 30/11/07 |
Keywords
- Device characterization
- Dynamic range
- Isothermal
- Pulsed measurements