A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

Shaogang Wang; Chunjian Tan; Liming Wang; Houcai Luo; Guoqi Zhang; Xianping Chen

doi:10.1109/EDTM.2019.8731110

A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

Shaogang Wang, Chunjian Tan, Liming Wang, Houcai Luo, Guoqi Zhang, Xianping Chen

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Abstract

A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under E_off of 8mJ/cm², the V_CE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	IEEE
Pages	410-412
Number of pages	3
ISBN (Electronic)	978-1-5386-6508-4
ISBN (Print)	978-1-5386-6509-1
DOIs	https://doi.org/10.1109/EDTM.2019.8731110
Publication status	Published - 1 Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Keywords

EMI noise
hole path
IGBT
on-state voltage
partial carrier layer
turn-off loss

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10.1109/EDTM.2019.8731110

Cite this

@inproceedings{96e9705bd1874e3f8caf240fd86ed388,

title = "A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability",

abstract = "A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under Eoff of 8mJ/cm2, the VCE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.",

keywords = "EMI noise, hole path, IGBT, on-state voltage, partial carrier layer, turn-off loss",

author = "Shaogang Wang and Chunjian Tan and Liming Wang and Houcai Luo and Guoqi Zhang and Xianping Chen",

year = "2019",

month = mar,

day = "1",

doi = "10.1109/EDTM.2019.8731110",

language = "English",

isbn = "978-1-5386-6509-1",

pages = "410--412",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "IEEE",

address = "United States",

note = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

}

Wang, S, Tan, C, Wang, L, Luo, H, Zhang, G & Chen, X 2019, A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731110, IEEE, pp. 410-412, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731110

A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability. / Wang, Shaogang; Tan, Chunjian; Wang, Liming et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. IEEE, 2019. p. 410-412 8731110.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

AU - Wang, Shaogang

AU - Tan, Chunjian

AU - Wang, Liming

AU - Luo, Houcai

AU - Zhang, Guoqi

AU - Chen, Xianping

PY - 2019/3/1

Y1 - 2019/3/1

N2 - A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under Eoff of 8mJ/cm2, the VCE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.

AB - A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under Eoff of 8mJ/cm2, the VCE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.

KW - EMI noise

KW - hole path

KW - IGBT

KW - on-state voltage

KW - partial carrier layer

KW - turn-off loss

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M3 - Conference contribution

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BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - IEEE

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

A Novel Partial Carrier Stored and Hole Path IGBT for Ultralow Turn-Off Loss and On-State Voltage With High EMI Noise Controllability

Abstract

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Keywords

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