A partial carrier stored and hole path floating dummy shield trench IGBT (PCS-FD-IGBT) is proposed and investigated by simulation. Under Eoff of 8mJ/cm2, the VCE(sat)) of 1200V class PCS-FD-IGBT is 1.223V, which is 11.1% and 2.2% less than CON-FD-IGBT and HP-FD-IGBT. Besides, the EMI noise of PCS-FD-IGBT is suppressed at a lower level (dV/dt is below 80kV/μs). Moreover, the PCS-FD-IGBT improves the gate drive controllability to easily adapt the larger range of system inductance.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherIEEE
Pages410-412
Number of pages3
ISBN (Electronic)978-1-5386-6508-4
ISBN (Print)978-1-5386-6509-1
DOIs
Publication statusPublished - 1 Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 12 Mar 201915 Mar 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period12/03/1915/03/19

    Research areas

  • EMI noise, hole path, IGBT, on-state voltage, partial carrier layer, turn-off loss

ID: 57243119