A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

Sining Pan; Yanquan Luo; Saleh Heidary Shalmany; Kofi A.A. Makinwa

doi:10.1109/ISSCC.2017.7870309

A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

Sining Pan, Yanquan Luo, Saleh Heidary Shalmany, Kofi A.A. Makinwa

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

12 Citations (Scopus)

40 Downloads (Pure)

Abstract

Temperature sensors are often used for the temperature compensation of frequency references [1-5]. High resolution and energy efficiency are then critical requirements, the former to minimize jitter and the latter to minimize power dissipation in a given conversion time. A MEMS-resonator-based sensor meets both criteria [1], but requires two resonators. In principle, resistor-based sensors also meet these criteria, and are CMOS compatible, but previous designs have been limited by the power dissipation [2-4] or 1/f noise [6] of their readout electronics. This paper describes a CMOS temperature sensor that digitizes the temperature-dependent phase shift of an RC filter. It achieves 410μKrms resolution in a 5ms conversion time, while consuming only 160μW. This corresponds to a resolution FOM of 0.13pJ·K2, a 5× improvement on previous CMOS sensors [6].

Original language	English
Title of host publication	2017 IEEE International Solid-State Circuits Conference, ISSCC 2017
Subtitle of host publication	Digest of Technical Papers
Editors	Laura C. Fujino
Place of Publication	Danvers, MA
Publisher	IEEE
Pages	158-160
Number of pages	3
ISBN (Electronic)	978-1-5090-3758-2
ISBN (Print)	978-1-5090-3757-5
DOIs	https://doi.org/10.1109/ISSCC.2017.7870309
Publication status	Published - 1 Feb 2017
Event	ISSCC 2017: 64th IEEE International Solid-State Circuits Conference - San Francisco, CA, United States Duration: 5 Feb 2017 → 9 Feb 2017

Conference

Conference	ISSCC 2017
Country/Territory	United States
City	San Francisco, CA
Period	5/02/17 → 9/02/17

Bibliographical note

Session 9, Sensors 9.1

Keywords

Temperature sensors
Bridge circuits
Resistors
1/f noise
Energy resolution
Sensor systems

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISSCC.2017.7870309

ISSCC2017_9.1Accepted author manuscript, 7.41 MB

Cite this

@inproceedings{301d5e4cc10344ec9b585a5b25024173,

title = "A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM",

abstract = "Temperature sensors are often used for the temperature compensation of frequency references [1-5]. High resolution and energy efficiency are then critical requirements, the former to minimize jitter and the latter to minimize power dissipation in a given conversion time. A MEMS-resonator-based sensor meets both criteria [1], but requires two resonators. In principle, resistor-based sensors also meet these criteria, and are CMOS compatible, but previous designs have been limited by the power dissipation [2-4] or 1/f noise [6] of their readout electronics. This paper describes a CMOS temperature sensor that digitizes the temperature-dependent phase shift of an RC filter. It achieves 410μKrms resolution in a 5ms conversion time, while consuming only 160μW. This corresponds to a resolution FOM of 0.13pJ·K2, a 5× improvement on previous CMOS sensors [6].",

keywords = "Temperature sensors, Bridge circuits, Resistors, 1/f noise, Energy resolution, Sensor systems",

author = "Sining Pan and Yanquan Luo and {Heidary Shalmany}, Saleh and Makinwa, {Kofi A.A.}",

note = "Session 9, Sensors 9.1; ISSCC 2017 : 64th IEEE International Solid-State Circuits Conference ; Conference date: 05-02-2017 Through 09-02-2017",

year = "2017",

month = feb,

day = "1",

doi = "10.1109/ISSCC.2017.7870309",

language = "English",

isbn = "978-1-5090-3757-5",

pages = "158--160",

editor = "Fujino, {Laura C.}",

booktitle = "2017 IEEE International Solid-State Circuits Conference, ISSCC 2017",

publisher = "IEEE",

address = "United States",

}

Pan, S, Luo, Y, Heidary Shalmany, S & Makinwa, KAA 2017, A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM. in LC Fujino (ed.), 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017: Digest of Technical Papers. IEEE, Danvers, MA, pp. 158-160, ISSCC 2017, San Francisco, CA, United States, 5/02/17. https://doi.org/10.1109/ISSCC.2017.7870309

A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM. / Pan, Sining; Luo, Yanquan; Heidary Shalmany, Saleh et al.
2017 IEEE International Solid-State Circuits Conference, ISSCC 2017: Digest of Technical Papers. ed. / Laura C. Fujino. Danvers, MA: IEEE, 2017. p. 158-160.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

AU - Pan, Sining

AU - Luo, Yanquan

AU - Heidary Shalmany, Saleh

AU - Makinwa, Kofi A.A.

N1 - Session 9, Sensors 9.1

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Temperature sensors are often used for the temperature compensation of frequency references [1-5]. High resolution and energy efficiency are then critical requirements, the former to minimize jitter and the latter to minimize power dissipation in a given conversion time. A MEMS-resonator-based sensor meets both criteria [1], but requires two resonators. In principle, resistor-based sensors also meet these criteria, and are CMOS compatible, but previous designs have been limited by the power dissipation [2-4] or 1/f noise [6] of their readout electronics. This paper describes a CMOS temperature sensor that digitizes the temperature-dependent phase shift of an RC filter. It achieves 410μKrms resolution in a 5ms conversion time, while consuming only 160μW. This corresponds to a resolution FOM of 0.13pJ·K2, a 5× improvement on previous CMOS sensors [6].

AB - Temperature sensors are often used for the temperature compensation of frequency references [1-5]. High resolution and energy efficiency are then critical requirements, the former to minimize jitter and the latter to minimize power dissipation in a given conversion time. A MEMS-resonator-based sensor meets both criteria [1], but requires two resonators. In principle, resistor-based sensors also meet these criteria, and are CMOS compatible, but previous designs have been limited by the power dissipation [2-4] or 1/f noise [6] of their readout electronics. This paper describes a CMOS temperature sensor that digitizes the temperature-dependent phase shift of an RC filter. It achieves 410μKrms resolution in a 5ms conversion time, while consuming only 160μW. This corresponds to a resolution FOM of 0.13pJ·K2, a 5× improvement on previous CMOS sensors [6].

KW - Temperature sensors

KW - Bridge circuits

KW - Resistors

KW - 1/f noise

KW - Energy resolution

KW - Sensor systems

U2 - 10.1109/ISSCC.2017.7870309

DO - 10.1109/ISSCC.2017.7870309

M3 - Conference contribution

SN - 978-1-5090-3757-5

SP - 158

EP - 160

BT - 2017 IEEE International Solid-State Circuits Conference, ISSCC 2017

A2 - Fujino, Laura C.

PB - IEEE

CY - Danvers, MA

T2 - ISSCC 2017

Y2 - 5 February 2017 through 9 February 2017

ER -

A Resistor-Based Temperature Sensor with a 0.13pJ·K2 Resolution FOM

Abstract

Conference

Bibliographical note

Keywords

UN SDGs

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