A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell

S. Suresh; J. de Wild; T. Kohl; D. G. Buldu; G. Brammertz; M. Meuris; J. Poortmans; O. Isabella; M. Zeman; B. Vermang

doi:10.1016/j.tsf.2018.11.027

A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se₂ solar cell

S. Suresh^*, J. de Wild, T. Kohl, D. G. Buldu, G. Brammertz, M. Meuris, J. Poortmans, O. Isabella, M. Zeman, B. Vermang

^*Corresponding author for this work

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Abstract

Reducing the absorber layer thickness below 1 μm for a regular copper indium gallium di-selenide (CIGS) solar cell lowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incomplete light absorption and high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rear surface modifications on a 430 nm thick CIGS absorber layer to reduce both these affects: an aluminium oxide passivation layer to reduce the back-surface recombination and point contact openings using nano-particles for electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.

Original language	English
Pages (from-to)	399-403
Number of pages	5
Journal	Thin Solid Films
Volume	669
DOIs	https://doi.org/10.1016/j.tsf.2018.11.027
Publication status	Published - 2019

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title = "A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell",

abstract = "Reducing the absorber layer thickness below 1 μm for a regular copper indium gallium di-selenide (CIGS) solar cell lowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incomplete light absorption and high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rear surface modifications on a 430 nm thick CIGS absorber layer to reduce both these affects: an aluminium oxide passivation layer to reduce the back-surface recombination and point contact openings using nano-particles for electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.",

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doi = "10.1016/j.tsf.2018.11.027",

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AU - Suresh, S.

AU - de Wild, J.

AU - Kohl, T.

AU - Buldu, D. G.

AU - Brammertz, G.

AU - Meuris, M.

AU - Poortmans, J.

AU - Isabella, O.

AU - Zeman, M.

AU - Vermang, B.

PY - 2019

Y1 - 2019

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AB - Reducing the absorber layer thickness below 1 μm for a regular copper indium gallium di-selenide (CIGS) solar cell lowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incomplete light absorption and high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rear surface modifications on a 430 nm thick CIGS absorber layer to reduce both these affects: an aluminium oxide passivation layer to reduce the back-surface recombination and point contact openings using nano-particles for electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.

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SP - 399

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se₂ solar cell

Abstract

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