DOI

  • XP Chen
  • N Yang
  • JK Jiang
  • QH Liang
  • DG Yang
  • GQ Zhang
  • TL Ren
Original languageEnglish
Pages (from-to)606-608
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number6
DOIs
Publication statusPublished - 2015

ID: 3397382