Documents

DOI

Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H 2 S and compare them to H 2 and NO 2 . Finally we demonstrate recent results of NO 2 detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices.

Original languageEnglish
Title of host publicationICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings
EditorsYu-Long Jiang, Ting-Ao Tang, Fan Ye
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Electronic)978-1-5386-4441-6
DOIs
Publication statusPublished - 2018
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 31 Oct 20183 Nov 2018

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
CountryChina
CityQingdao
Period31/10/183/11/18

    Research areas

  • approximation theory, extrapolation, Fourier transforms, image enhancement, image fusion, image resolution, inverse transforms, matrix algebra, microwave imaging

ID: 51774775