AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Robert Sokolovskij; Jian Zhang; Yang Jiang; Ganhui Chen; Guo Qi Zhang; Hongyu Yu

doi:10.1109/ICSICT.2018.8564904

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Robert Sokolovskij, Jian Zhang, Yang Jiang, Ganhui Chen, Guo Qi Zhang, Hongyu Yu

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

61 Downloads (Pure)

Abstract

Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H ₂ S and compare them to H ₂ and NO ₂ . Finally we demonstrate recent results of NO ₂ detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices.

Original language	English
Title of host publication	ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings
Editors	Yu-Long Jiang, Ting-Ao Tang, Fan Ye
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-5386-4441-6
DOIs	https://doi.org/10.1109/ICSICT.2018.8564904
Publication status	Published - 2018
Event	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China Duration: 31 Oct 2018 → 3 Nov 2018

Conference

Conference	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/Territory	China
City	Qingdao
Period	31/10/18 → 3/11/18

Bibliographical note

Accepted author manuscript

Keywords

approximation theory
extrapolation
Fourier transforms
image enhancement
image fusion
image resolution
inverse transforms
matrix algebra
microwave imaging

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10.1109/ICSICT.2018.8564904

51774775 - ICSICT_HEMT_sensors_RS_YuHY_v3Accepted author manuscript, 559 KB

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Sokolovskij, R., Zhang, J., Jiang, Y., Chen, G., Zhang, G. Q., & Yu, H. (2018). AlGaN/GaN HEMT micro-sensor technology for gas sensing applications. In Y.-L. Jiang, T.-A. Tang, & F. Ye (Eds.), ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings (pp. 1-4). Article 8564904 IEEE. https://doi.org/10.1109/ICSICT.2018.8564904

@inproceedings{a72381ea54584d43beb813fcb7658042,

title = "AlGaN/GaN HEMT micro-sensor technology for gas sensing applications",

abstract = " Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H 2 S and compare them to H 2 and NO 2 . Finally we demonstrate recent results of NO 2 detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices. ",

keywords = "approximation theory, extrapolation, Fourier transforms, image enhancement, image fusion, image resolution, inverse transforms, matrix algebra, microwave imaging",

author = "Robert Sokolovskij and Jian Zhang and Yang Jiang and Ganhui Chen and Zhang, {Guo Qi} and Hongyu Yu",

note = "Accepted author manuscript; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",

year = "2018",

doi = "10.1109/ICSICT.2018.8564904",

language = "English",

pages = "1--4",

editor = "Yu-Long Jiang and Ting-Ao Tang and Fan Ye",

booktitle = "ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings",

publisher = "IEEE",

address = "United States",

}

Sokolovskij, R, Zhang, J, Jiang, Y, Chen, G, Zhang, GQ & Yu, H 2018, AlGaN/GaN HEMT micro-sensor technology for gas sensing applications. in Y-L Jiang, T-A Tang & F Ye (eds), ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings., 8564904, IEEE, Piscataway, NJ, pp. 1-4, 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, Qingdao, China, 31/10/18. https://doi.org/10.1109/ICSICT.2018.8564904

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications. / Sokolovskij, Robert; Zhang, Jian; Jiang, Yang et al.
ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings. ed. / Yu-Long Jiang; Ting-Ao Tang; Fan Ye. Piscataway, NJ: IEEE, 2018. p. 1-4 8564904.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

AU - Sokolovskij, Robert

AU - Zhang, Jian

AU - Jiang, Yang

AU - Chen, Ganhui

AU - Zhang, Guo Qi

AU - Yu, Hongyu

N1 - Accepted author manuscript

PY - 2018

Y1 - 2018

N2 - Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H 2 S and compare them to H 2 and NO 2 . Finally we demonstrate recent results of NO 2 detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices.

AB - Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design, fabrication and testing of AlGaN/GaN high electron mobility transistor (HEMT) based sensors for detection of various gases. First, the method of as-fabricated device baseline value stabilization is demonstrated. Secondly, the impact of sensor design is discussed with the emphasis on gate electrode geometry optimizations to enhance sensing performance. Then we present the sensing characteristics of Pt-HEMTs towards H 2 S and compare them to H 2 and NO 2 . Finally we demonstrate recent results of NO 2 detection with Ti/Au based HEMT sensors, which are superior to those using Pt based devices.

KW - approximation theory

KW - extrapolation

KW - Fourier transforms

KW - image enhancement

KW - image fusion

KW - image resolution

KW - inverse transforms

KW - matrix algebra

KW - microwave imaging

UR - http://www.scopus.com/inward/record.url?scp=85060271618&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2018.8564904

DO - 10.1109/ICSICT.2018.8564904

M3 - Conference contribution

AN - SCOPUS:85060271618

SP - 1

EP - 4

BT - ICSICT-2018 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings

A2 - Jiang, Yu-Long

A2 - Tang, Ting-Ao

A2 - Ye, Fan

PB - IEEE

CY - Piscataway, NJ

T2 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018

Y2 - 31 October 2018 through 3 November 2018

ER -

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

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