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All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy. / Morana, Bruno; Silvestri, Cinzia; Creemer, Fredrik; Sarro, Lina.

2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS). Piscataway : IEEE, 2016. p. 753-756.

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Harvard

Morana, B, Silvestri, C, Creemer, F & Sarro, L 2016, All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy. in 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, Piscataway, pp. 753-756, MEMS 2016, Shanghai, China, 24/01/16. https://doi.org/10.1109/MEMSYS.2016.7421738

APA

Morana, B., Silvestri, C., Creemer, F., & Sarro, L. (2016). All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy. In 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 753-756). Piscataway: IEEE. https://doi.org/10.1109/MEMSYS.2016.7421738

Vancouver

Morana B, Silvestri C, Creemer F, Sarro L. All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy. In 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS). Piscataway: IEEE. 2016. p. 753-756 https://doi.org/10.1109/MEMSYS.2016.7421738

Author

Morana, Bruno ; Silvestri, Cinzia ; Creemer, Fredrik ; Sarro, Lina. / All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy. 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS). Piscataway : IEEE, 2016. pp. 753-756

BibTeX

@inproceedings{3bcf4c610f834e16a936ae3291d9f194,
title = "All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy",
abstract = "We present a silicon carbide (SiC) based surface micromachined nanoreactor for in-situ characterization of reactions between solid nanostructured materials and gasses in transmission electron microscopes (TEMs). For the first time SiC is used as construction material for this device and a novel design of gas-microchannel with a two-level height is implemented. The use of SiC compared to the standard construction materials allows for easier and more reliable fabrication of the complete microsystem and for improved performance in terms of temperature. Additionally, the two-level height channel eases the loading of the specimens without affecting the sensitivity in the gas analysis.",
keywords = "Microchannels, Silicon carbide, Fabrication, Etching, Perfomance evaluation, Loading, Resistance",
author = "Bruno Morana and Cinzia Silvestri and Fredrik Creemer and Lina Sarro",
year = "2016",
doi = "10.1109/MEMSYS.2016.7421738",
language = "English",
isbn = "978-1-5090-1973-1",
pages = "753--756",
booktitle = "2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)",
publisher = "IEEE",
address = "United States",

}

RIS

TY - GEN

T1 - All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy

AU - Morana, Bruno

AU - Silvestri, Cinzia

AU - Creemer, Fredrik

AU - Sarro, Lina

PY - 2016

Y1 - 2016

N2 - We present a silicon carbide (SiC) based surface micromachined nanoreactor for in-situ characterization of reactions between solid nanostructured materials and gasses in transmission electron microscopes (TEMs). For the first time SiC is used as construction material for this device and a novel design of gas-microchannel with a two-level height is implemented. The use of SiC compared to the standard construction materials allows for easier and more reliable fabrication of the complete microsystem and for improved performance in terms of temperature. Additionally, the two-level height channel eases the loading of the specimens without affecting the sensitivity in the gas analysis.

AB - We present a silicon carbide (SiC) based surface micromachined nanoreactor for in-situ characterization of reactions between solid nanostructured materials and gasses in transmission electron microscopes (TEMs). For the first time SiC is used as construction material for this device and a novel design of gas-microchannel with a two-level height is implemented. The use of SiC compared to the standard construction materials allows for easier and more reliable fabrication of the complete microsystem and for improved performance in terms of temperature. Additionally, the two-level height channel eases the loading of the specimens without affecting the sensitivity in the gas analysis.

KW - Microchannels

KW - Silicon carbide

KW - Fabrication

KW - Etching

KW - Perfomance evaluation

KW - Loading

KW - Resistance

U2 - 10.1109/MEMSYS.2016.7421738

DO - 10.1109/MEMSYS.2016.7421738

M3 - Conference contribution

SN - 978-1-5090-1973-1

SP - 753

EP - 756

BT - 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS)

PB - IEEE

CY - Piscataway

ER -

ID: 11144863