Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

S Evseev, LK Nanver, B Rejaei Salmassi, S Milosavljevic

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Original language	English
Pages (from-to)	2-7
Number of pages	6
Journal	Microelectronic Engineering
Volume	125
DOIs	https://doi.org/10.1016/j.mee.2014.04.003
Publication status	Published - 2014

Harvest
Available online 13-4-2014

Access to Document

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title = "Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses",

author = "S Evseev and LK Nanver and {Rejaei Salmassi}, B and S Milosavljevic",

note = "Harvest Available online 13-4-2014",

year = "2014",

doi = "10.1016/j.mee.2014.04.003",

language = "English",

volume = "125",

pages = "2--7",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

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TY - JOUR

T1 - Amorphous silicon carbide nitride layer as an alternative to a disordered silicon surface to suppress RF/microwave losses

AU - Evseev, S

AU - Nanver, LK

AU - Rejaei Salmassi, B

AU - Milosavljevic, S

N1 - Harvest Available online 13-4-2014

PY - 2014

Y1 - 2014

U2 - 10.1016/j.mee.2014.04.003

DO - 10.1016/j.mee.2014.04.003

M3 - Article

SN - 0167-9317

VL - 125

SP - 2

EP - 7

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -