An Oxide Electrothermal Filter in Standard CMOS

Lorenzo Pedalà; Uğur Sonmez; Fabio Sebastiano; Kofi A.A. Makinwa; Krishnaswamy Nagaraj; Joonsung Park

doi:10.1109/icsens.2016.7808512

An Oxide Electrothermal Filter in Standard CMOS

Lorenzo Pedalà, Uğur Sonmez, Fabio Sebastiano, Kofi A.A. Makinwa, Krishnaswamy Nagaraj, Joonsung Park

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Abstract

Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from -40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.

Original language	English
Title of host publication	2016 IEEE Sensors Proceedings
Editors	E. Fontana, C. Ruiz-Zamarreno
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	343-345
Number of pages	3
ISBN (Electronic)	978-1-4799-8287-5
DOIs	https://doi.org/10.1109/icsens.2016.7808512
Publication status	Published - 2016
Event	IEEE Sensors 2016: 15th IEEE Sensors Conference - Caribe Royale All-Suite Hotel and Convention Center, Orlando, FL, United States Duration: 30 Oct 2016 → 2 Nov 2016 Conference number: 15

Conference

Conference	IEEE Sensors 2016
Country/Territory	United States
City	Orlando, FL
Period	30/10/16 → 2/11/16

Keywords

phase domain sigma delta ADC
electrothermal filter
thermal diffusivity
self-referenced
temperature sensor

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10.1109/icsens.2016.7808512

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title = "An Oxide Electrothermal Filter in Standard CMOS",

abstract = "Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from -40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.",

keywords = "phase domain sigma delta ADC, electrothermal filter, thermal diffusivity, self-referenced, temperature sensor",

author = "Lorenzo Pedal{\`a} and Uğur Sonmez and Fabio Sebastiano and Makinwa, {Kofi A.A.} and Krishnaswamy Nagaraj and Joonsung Park",

year = "2016",

doi = "10.1109/icsens.2016.7808512",

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AU - Pedalà, Lorenzo

AU - Sonmez, Uğur

AU - Sebastiano, Fabio

AU - Makinwa, Kofi A.A.

AU - Nagaraj, Krishnaswamy

AU - Park, Joonsung

N1 - Conference code: 15

PY - 2016

Y1 - 2016

N2 - Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from -40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.

AB - Due to their relatively stable phase shift over temperature, electrothermal filters (ETFs) with an oxide heat path have been used as on-chip phase references, e.g. for thermal diffusivity (TD) temperature sensors. However, previous oxide ETFs were limited to SOI processes, whose deep-trench isolation could be used to create an oxide-dominated heat path. This paper describes, for the first time, an oxide ETF realized in a bulk CMOS process. It achieves a phase spread of 0.6 % (3 sigma, no trim) from -40 °C to 125 °C. When used as a reference for a TD temperature sensor, this translates into a temperature sensing spread of ±2.7 °C (3 sigma, no trim). This is 1.8 times less than the spread reported for SOI implementations, making the CMOS variant not only feasible, but also competitive.

KW - phase domain sigma delta ADC

KW - electrothermal filter

KW - thermal diffusivity

KW - self-referenced

KW - temperature sensor

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M3 - Conference contribution

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BT - 2016 IEEE Sensors Proceedings

A2 - Fontana, E.

A2 - Ruiz-Zamarreno, C.

PB - IEEE

CY - Piscataway, NJ

T2 - IEEE Sensors 2016

Y2 - 30 October 2016 through 2 November 2016

ER -

An Oxide Electrothermal Filter in Standard CMOS

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Keywords

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