Atomic Layer Deposition of ZnO on InP Quantum Dot Films for Charge Separation, Stabilization, and Solar Cell Formation

Ryan W. Crisp; Fatemeh S.M. Hashemi; Jordi Alkemade; Nicholas Kirkwood; Gianluca Grimaldi; Sachin Kinge; Laurens D.A. Siebbeles; J. Ruud van Ommen; Arjan J. Houtepen

doi:10.1002/admi.201901600

Atomic Layer Deposition of ZnO on InP Quantum Dot Films for Charge Separation, Stabilization, and Solar Cell Formation

Ryan W. Crisp^*, Fatemeh S.M. Hashemi, Jordi Alkemade, Nicholas Kirkwood, Gianluca Grimaldi, Sachin Kinge, Laurens D.A. Siebbeles, J. Ruud van Ommen, Arjan J. Houtepen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time-resolved microwave conductivity measurements. High carrier mobilities of 4 cm² (V s)⁻¹ and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof-of-concept photovoltaic devices of InP QD films are demonstrated with an ALD-grown ZnO electron extraction layer.

Original language	English
Article number	1901600
Number of pages	8
Journal	Advanced Materials Interfaces
Volume	7
Issue number	4
DOIs	https://doi.org/10.1002/admi.201901600
Publication status	Published - 2020

Keywords

charge transport
LEDs
p–n junctions
quantum dots
solar cells
time-resolved microwave conductivity

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/admi.201901600

admi.201901600Final published version, 1.42 MBLicence: CC BY

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@article{116908a97c2c4fbf841b7c143cf80e92,

title = "Atomic Layer Deposition of ZnO on InP Quantum Dot Films for Charge Separation, Stabilization, and Solar Cell Formation",

abstract = "To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time-resolved microwave conductivity measurements. High carrier mobilities of 4 cm2 (V s)−1 and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof-of-concept photovoltaic devices of InP QD films are demonstrated with an ALD-grown ZnO electron extraction layer.",

keywords = "charge transport, LEDs, p–n junctions, quantum dots, solar cells, time-resolved microwave conductivity",

author = "Crisp, {Ryan W.} and Hashemi, {Fatemeh S.M.} and Jordi Alkemade and Nicholas Kirkwood and Gianluca Grimaldi and Sachin Kinge and Siebbeles, {Laurens D.A.} and {van Ommen}, {J. Ruud} and Houtepen, {Arjan J.}",

year = "2020",

doi = "10.1002/admi.201901600",

language = "English",

volume = "7",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "John Wiley & Sons",

number = "4",

}

TY - JOUR

T1 - Atomic Layer Deposition of ZnO on InP Quantum Dot Films for Charge Separation, Stabilization, and Solar Cell Formation

AU - Crisp, Ryan W.

AU - Hashemi, Fatemeh S.M.

AU - Alkemade, Jordi

AU - Kirkwood, Nicholas

AU - Grimaldi, Gianluca

AU - Kinge, Sachin

AU - Siebbeles, Laurens D.A.

AU - van Ommen, J. Ruud

AU - Houtepen, Arjan J.

PY - 2020

Y1 - 2020

N2 - To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time-resolved microwave conductivity measurements. High carrier mobilities of 4 cm2 (V s)−1 and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof-of-concept photovoltaic devices of InP QD films are demonstrated with an ALD-grown ZnO electron extraction layer.

AB - To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time-resolved microwave conductivity measurements. High carrier mobilities of 4 cm2 (V s)−1 and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof-of-concept photovoltaic devices of InP QD films are demonstrated with an ALD-grown ZnO electron extraction layer.

KW - charge transport

KW - LEDs

KW - p–n junctions

KW - quantum dots

KW - solar cells

KW - time-resolved microwave conductivity

UR - http://www.scopus.com/inward/record.url?scp=85078035825&partnerID=8YFLogxK

U2 - 10.1002/admi.201901600

DO - 10.1002/admi.201901600

M3 - Article

AN - SCOPUS:85078035825

SN - 2196-7350

VL - 7

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 4

M1 - 1901600

ER -

Atomic Layer Deposition of ZnO on InP Quantum Dot Films for Charge Separation, Stabilization, and Solar Cell Formation

Abstract

Keywords

UN SDGs

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