Abstract
Ohmic contacts to AlGaN/GaN with different metal stacks on Si or Sapphire substrate are fabricated and compared in this paper. For Au-capped ohmic contacts, the lowest contact resistances of 0.7 Ω·mm and 1.3 Ω·mm are achieved by Ti/Al/Ti/Au (20/110/40/50 nm) and Ti/Al/Ni/Au (20/110/40/50 nm) stacks, respectively. It also shows that the substrate material and epitaxial structure play an important role in ohmic contact engineering. For CMOS compatible Au-free structures, the Ti/Al/W (20/100/30 nm), Ti/Al/Ni/W (20/100/20/10 nm) and (20/100/10/20 nm) are demonstrated with the minimum contact resistance values of 0.45, 1.3, and 1.6 Ω·mm, respectively. The three metal stacks of Au-free ohmic contact are compared and obtained results are explained.
Original language | English |
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Title of host publication | 2018 18th International Workshop on Junction Technology, IWJT-2018 |
Subtitle of host publication | Extended Abstracts |
Editors | Yu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 1-4 |
Number of pages | 4 |
Volume | 2018-January |
ISBN (Electronic) | 978-1-5386-4513-0 |
ISBN (Print) | 978-1-5386-4511-6 |
DOIs | |
Publication status | Published - 2018 |
Event | 18th International Workshop on Junction Technology, IWJT 2018 - Shanghai, China Duration: 8 Mar 2018 → 9 Mar 2018 |
Conference
Conference | 18th International Workshop on Junction Technology, IWJT 2018 |
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Country/Territory | China |
City | Shanghai |
Period | 8/03/18 → 9/03/18 |
Keywords
- Ohmic contacts
- Annealing
- Metals
- Contact resistance
- Substrates
- Silicon
- Gallium nitride