BiCMOS Integrated Waveguide with Artificial Dielectric at Submillimeter Wave Frequencies

M. Alonso Del Pino; H. Thippur Shivamurthy; D. Cavallo; L. Galatro; M. Spirito

doi:10.1109/mwsym.2016.7540093

BiCMOS Integrated Waveguide with Artificial Dielectric at Submillimeter Wave Frequencies

M. Alonso Del Pino, H. Thippur Shivamurthy, D. Cavallo, L. Galatro, M. Spirito

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

In this paper we present a synthetic waveguide integrated in a commercial BiCMOS back-end-of-line, employing artificial dielectrics (ADs) to reduce the component size. The AD is realized by employing floating pillars using the various layers available in the technology, thus fulfilling metal density rule and boosting the effective permittivity of the host medium (i.e., SiO2) to 12.5. The impact of the AD translates in a 56% width reduction of the waveguide, for the same cutoff frequency. The structure provides 1.6dB of losses per guide wavelength (λg) at 300GHz and more than 30dB suppression below 180GHz, avoiding the need of filters in multiplication stages.

Original language	English
Title of host publication	2016 IEEE MTT-S International Microwave Symposium (IMS)
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-5090-0698-4
DOIs	https://doi.org/10.1109/mwsym.2016.7540093
Publication status	Published - 11 Aug 2016
Event	IEEE MTT-S International Microwave Symposium (IMS) 2016 - San Francisco, United States Duration: 22 May 2016 → 27 May 2016

Conference

Conference	IEEE MTT-S International Microwave Symposium (IMS) 2016
Abbreviated title	IMS 2016
Country/Territory	United States
City	San Francisco
Period	22/05/16 → 27/05/16

Keywords

submillimeter-wave
BiCMOS
integrated waveguide
ificial dielectric (AD)

Access to Document

10.1109/mwsym.2016.7540093

Cite this

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title = "BiCMOS Integrated Waveguide with Artificial Dielectric at Submillimeter Wave Frequencies",

abstract = "In this paper we present a synthetic waveguide integrated in a commercial BiCMOS back-end-of-line, employing artificial dielectrics (ADs) to reduce the component size. The AD is realized by employing floating pillars using the various layers available in the technology, thus fulfilling metal density rule and boosting the effective permittivity of the host medium (i.e., SiO2) to 12.5. The impact of the AD translates in a 56% width reduction of the waveguide, for the same cutoff frequency. The structure provides 1.6dB of losses per guide wavelength (λg) at 300GHz and more than 30dB suppression below 180GHz, avoiding the need of filters in multiplication stages.",

keywords = "submillimeter-wave, BiCMOS, integrated waveguide, ificial dielectric (AD)",

author = "{Alonso Del Pino}, M. and {Thippur Shivamurthy}, H. and D. Cavallo and L. Galatro and M. Spirito",

year = "2016",

month = aug,

day = "11",

doi = "10.1109/mwsym.2016.7540093",

language = "English",

pages = "1--4",

booktitle = "2016 IEEE MTT-S International Microwave Symposium (IMS)",

publisher = "IEEE",

address = "United States",

note = "IEEE MTT-S International Microwave Symposium (IMS) 2016, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",

}

Alonso Del Pino, M, Thippur Shivamurthy, H, Cavallo, D , Galatro, L & Spirito, M 2016, BiCMOS Integrated Waveguide with Artificial Dielectric at Submillimeter Wave Frequencies. in 2016 IEEE MTT-S International Microwave Symposium (IMS). IEEE, pp. 1-4, IEEE MTT-S International Microwave Symposium (IMS) 2016, San Francisco, United States, 22/05/16. https://doi.org/10.1109/mwsym.2016.7540093

TY - GEN

T1 - BiCMOS Integrated Waveguide with Artificial Dielectric at Submillimeter Wave Frequencies

AU - Alonso Del Pino, M.

AU - Thippur Shivamurthy, H.

AU - Cavallo, D.

AU - Galatro, L.

AU - Spirito, M.

PY - 2016/8/11

Y1 - 2016/8/11

N2 - In this paper we present a synthetic waveguide integrated in a commercial BiCMOS back-end-of-line, employing artificial dielectrics (ADs) to reduce the component size. The AD is realized by employing floating pillars using the various layers available in the technology, thus fulfilling metal density rule and boosting the effective permittivity of the host medium (i.e., SiO2) to 12.5. The impact of the AD translates in a 56% width reduction of the waveguide, for the same cutoff frequency. The structure provides 1.6dB of losses per guide wavelength (λg) at 300GHz and more than 30dB suppression below 180GHz, avoiding the need of filters in multiplication stages.

AB - In this paper we present a synthetic waveguide integrated in a commercial BiCMOS back-end-of-line, employing artificial dielectrics (ADs) to reduce the component size. The AD is realized by employing floating pillars using the various layers available in the technology, thus fulfilling metal density rule and boosting the effective permittivity of the host medium (i.e., SiO2) to 12.5. The impact of the AD translates in a 56% width reduction of the waveguide, for the same cutoff frequency. The structure provides 1.6dB of losses per guide wavelength (λg) at 300GHz and more than 30dB suppression below 180GHz, avoiding the need of filters in multiplication stages.

KW - submillimeter-wave

KW - BiCMOS

KW - integrated waveguide

KW - ificial dielectric (AD)

U2 - 10.1109/mwsym.2016.7540093

DO - 10.1109/mwsym.2016.7540093

M3 - Conference contribution

SP - 1

EP - 4

BT - 2016 IEEE MTT-S International Microwave Symposium (IMS)

PB - IEEE

T2 - IEEE MTT-S International Microwave Symposium (IMS) 2016

Y2 - 22 May 2016 through 27 May 2016

ER -

BiCMOS Integrated Waveguide with Artificial Dielectric at Submillimeter Wave Frequencies

Abstract

Conference

Keywords

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