Branchline and directional THz coupler based on PECVD SiNx-technology

M. Finkel; H. R. Thierschmann; L. Galatro; A. J. Katan; D.J. Thoen; P. J. de Visser; M. Spirito; T. M. Klapwijk

doi:10.1109/irmmw-thz.2016.7758586

Branchline and directional THz coupler based on PECVD SiNx-technology

M. Finkel, H. R. Thierschmann, L. Galatro, A. J. Katan, D.J. Thoen, P. J. de Visser, M. Spirito, T. M. Klapwijk

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.

Original language	English
Title of host publication	41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016
Editors	Peter Uhd Jepsen
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1-2
Number of pages	2
ISBN (Electronic)	978-1-4673-8485-8
DOIs	https://doi.org/10.1109/irmmw-thz.2016.7758586
Publication status	Published - 1 Dec 2016
Event	IRMMW-THz 2016: 41st International Conference on Infrared, Millimeter, and Terahertz Waves - Bella Center, Copenhagen, Denmark Duration: 25 Sept 2016 → 30 Sept 2016 Conference number: 41 http://www.irmmw-thz2016.org/

Conference

Conference	IRMMW-THz 2016
Abbreviated title	IRMMW-THz
Country/Territory	Denmark
City	Copenhagen
Period	25/09/16 → 30/09/16
Internet address	http://www.irmmw-thz2016.org/

Keywords

Microstrip
Fixtures
Coplanar waveguides
Couplers
Standards
Probes
Dielectrics

Access to Document

10.1109/irmmw-thz.2016.7758586

Cite this

Finkel, M., Thierschmann, H. R., Galatro, L., Katan, A. J., Thoen, D. J., Visser, P. J. D., Spirito, M., & Klapwijk, T. M. (2016). Branchline and directional THz coupler based on PECVD SiNx-technology. In P. U. Jepsen (Ed.), 41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016 (pp. 1-2). IEEE. https://doi.org/10.1109/irmmw-thz.2016.7758586

@inproceedings{0af4b373a91b4d0f9feb3655fcc25889,

title = "Branchline and directional THz coupler based on PECVD SiNx-technology",

abstract = "A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.",

keywords = "Microstrip, Fixtures, Coplanar waveguides, Couplers, Standards, Probes, Dielectrics",

author = "M. Finkel and Thierschmann, {H. R.} and L. Galatro and Katan, {A. J.} and D.J. Thoen and Visser, {P. J. de} and M. Spirito and Klapwijk, {T. M.}",

year = "2016",

month = dec,

day = "1",

doi = "10.1109/irmmw-thz.2016.7758586",

language = "English",

pages = "1--2",

editor = "Jepsen, {Peter Uhd}",

booktitle = "41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016",

publisher = "IEEE",

address = "United States",

note = "IRMMW-THz 2016 : 41st International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz ; Conference date: 25-09-2016 Through 30-09-2016",

url = "http://www.irmmw-thz2016.org/",

}

Finkel, M, Thierschmann, HR, Galatro, L , Katan, AJ , Thoen, DJ , Visser, PJD , Spirito, M & Klapwijk, TM 2016, Branchline and directional THz coupler based on PECVD SiNx-technology. in PU Jepsen (ed.), 41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016. IEEE, Piscataway, NJ, pp. 1-2, IRMMW-THz 2016, Copenhagen, Denmark, 25/09/16. https://doi.org/10.1109/irmmw-thz.2016.7758586

Branchline and directional THz coupler based on PECVD SiNx-technology. / Finkel, M.; Thierschmann, H. R.; Galatro, L. et al.
41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016. ed. / Peter Uhd Jepsen. Piscataway, NJ: IEEE, 2016. p. 1-2.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Branchline and directional THz coupler based on PECVD SiNx-technology

AU - Finkel, M.

AU - Thierschmann, H. R.

AU - Galatro, L.

AU - Katan, A. J.

AU - Thoen, D.J.

AU - Visser, P. J. de

AU - Spirito, M.

AU - Klapwijk, T. M.

N1 - Conference code: 41

PY - 2016/12/1

Y1 - 2016/12/1

N2 - A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.

AB - A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.

KW - Microstrip

KW - Fixtures

KW - Coplanar waveguides

KW - Couplers

KW - Standards

KW - Probes

KW - Dielectrics

U2 - 10.1109/irmmw-thz.2016.7758586

DO - 10.1109/irmmw-thz.2016.7758586

M3 - Conference contribution

SP - 1

EP - 2

BT - 41st International Conference on Infrared, Millimeter, and Terahertz waves, IRMMW-THz 2016

A2 - Jepsen, Peter Uhd

PB - IEEE

CY - Piscataway, NJ

T2 - IRMMW-THz 2016

Y2 - 25 September 2016 through 30 September 2016

ER -

Branchline and directional THz coupler based on PECVD SiNx-technology

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this