Original language | Undefined/Unknown |
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Pages (from-to) | 263-266 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 294 |
Publication status | Published - 1997 |
Characterisation of an n-type Si/SiGe modulation doped field-effect transistor
VI Kuznetsov, K Werner, S Radelaar, JW Metselaar
Research output: Contribution to journal › Article › Scientific › peer-review
1
Citation
(Scopus)