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Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures. / Patra, B ; Mehrpoo, Milad; Ruffino, Andrea; Sebastiano, Fabio; Charbon, Edoardo; Babaie, Masoud.

In: IEEE Journal of the Electron Devices Society, Vol. 8, No. 1, 9060975, 2020, p. 448-456.

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@article{dc2d4e16f2944de4aa6545841c871d01,
title = "Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures",
abstract = "This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.",
keywords = "Cryo-CMOS, Quantum computing, Cryogenic, Capacitor, Inductors, Transformer, Resonators, Quality factor",
author = "B Patra and Milad Mehrpoo and Andrea Ruffino and Fabio Sebastiano and Edoardo Charbon and Masoud Babaie",
year = "2020",
doi = "10.1109/JEDS.2020.2986722",
language = "English",
volume = "8",
pages = "448--456",
journal = "IEEE Journal of the Electron Devices Society",
issn = "2168-6734",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
number = "1",

}

RIS

TY - JOUR

T1 - Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

AU - Patra, B

AU - Mehrpoo, Milad

AU - Ruffino, Andrea

AU - Sebastiano, Fabio

AU - Charbon, Edoardo

AU - Babaie, Masoud

PY - 2020

Y1 - 2020

N2 - This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.

AB - This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.

KW - Cryo-CMOS

KW - Quantum computing

KW - Cryogenic

KW - Capacitor

KW - Inductors

KW - Transformer

KW - Resonators

KW - Quality factor

UR - http://www.scopus.com/inward/record.url?scp=85084809329&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2020.2986722

DO - 10.1109/JEDS.2020.2986722

M3 - Article

VL - 8

SP - 448

EP - 456

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

IS - 1

M1 - 9060975

ER -

ID: 72760367