• 08329135

    Final published version, 1.15 MB, PDF document


Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.

Original languageEnglish
Number of pages11
JournalIEEE Journal of the Electron Devices Society
Publication statusPublished - 2018

    Research areas

  • 4 K, characterization, CMOS, CMOS technology, cryo-CMOS, cryogenic, Cryogenic electronics, Cryogenics, Integrated circuit modeling, kink, LNA., modeling, MOS devices, Quantum computing, Semiconductor device modeling

ID: 44183338