Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Rosario M. Incandela; Lin Song; Harald Homulle; Edoardo Charbon; Andrei Vladimirescu; Fabio Sebastiano

doi:10.1109/JEDS.2018.2821763

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Rosario M. Incandela, Lin Song, Harald Homulle, Edoardo Charbon, Andrei Vladimirescu, Fabio Sebastiano

QuTech Advanced Research Centre

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.

Original language	English
Number of pages	11
Journal	IEEE Journal of the Electron Devices Society
Volume	6
DOIs	https://doi.org/10.1109/JEDS.2018.2821763
Publication status	Published - 2018

Keywords

4 K
characterization
CMOS
CMOS technology
cryo-CMOS
cryogenic
Cryogenic electronics
Cryogenics
Integrated circuit modeling
kink
LNA.
modeling
MOS devices
Quantum computing
Semiconductor device modeling

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title = "Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures",

abstract = "Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.",

keywords = "4 K, characterization, CMOS, CMOS technology, cryo-CMOS, cryogenic, Cryogenic electronics, Cryogenics, Integrated circuit modeling, kink, LNA., modeling, MOS devices, Quantum computing, Semiconductor device modeling",

author = "Incandela, {Rosario M.} and Lin Song and Harald Homulle and Edoardo Charbon and Andrei Vladimirescu and Fabio Sebastiano",

year = "2018",

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language = "English",

volume = "6",

journal = "IEEE Journal of the Electron Devices Society",

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T1 - Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

AU - Incandela, Rosario M.

AU - Song, Lin

AU - Homulle, Harald

AU - Charbon, Edoardo

AU - Vladimirescu, Andrei

AU - Sebastiano, Fabio

PY - 2018

Y1 - 2018

N2 - Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.

AB - Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.

KW - 4 K

KW - characterization

KW - CMOS

KW - CMOS technology

KW - cryo-CMOS

KW - cryogenic

KW - Cryogenic electronics

KW - Cryogenics

KW - Integrated circuit modeling

KW - kink

KW - LNA.

KW - modeling

KW - MOS devices

KW - Quantum computing

KW - Semiconductor device modeling

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VL - 6

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

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Keywords

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