Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons

M Clement, JMM de Nijs, H Schut, A van Veen

Research output: Contribution to journal › Article › Professional

Cite this

@article{7e74b7dc61714afba880ae0794180c05,

title = "Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons",

author = "M Clement and {de Nijs}, JMM and H Schut and {van Veen}, A",

year = "1997",

language = "Undefined/Unknown",

volume = "255",

pages = "718--720",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "257",

}