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  • 29537638

    Final published version, 507 KB, PDF-document

DOI

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.

Original languageEnglish
Pages (from-to)1144-1147
Number of pages4
JournalProcedia Engineering
Volume168
DOIs
Publication statusPublished - 2016
EventEurosensors 2016: The 30th anniversary Eurosensors Conference - Budapest, Hungary
Duration: 4 Sep 20167 Sep 2016

    Research areas

  • actuators, coefficent of thermal exoansion, silicon carbide

ID: 29537638