Research output per year
Research output per year
Thierry de Vrijer, Fai Tong Si, Hairen Tan, Arno Hendrikus Marie Smets
Research output: Contribution to journal › Article › Scientific › peer-review
Doped hydrogenated silicon oxide layers (SiOX:H) have recently been successfully integrated as front window layers, back reflector layers, intermediate reflector layers, passivation layers, and junction layers in thin-film silicon solar cells. Depending on the deposition conditions of the SiOX:H layers, some devices suffer from a degradation in performance in time. In this paper, we demonstrate the responsible mechanism involved. It is demonstrated that oxidation of the p-Type doped (p-)SiOX:H with a high crystallinity and, therefore, poor passivation of crystalline grains is responsible for this degradation. The oxidation of p-SiOX:H is caused by the in-diffusion of water vapor from the ambient air. Stable p-SiOX:H can be obtained if the material is processed at higher pressure. In addition, the degradation can be prevented if the cell is well encapsulated, like using dense n-Type (n-)SiOX:H in the back reflector of the cell.
Original language | English |
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Article number | 8565985 |
Pages (from-to) | 3-11 |
Number of pages | 9 |
Journal | IEEE Journal of Photovoltaics |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2019 |
Research output: Thesis › Dissertation (TU Delft)