Conductance along the interface formed by 400 °C pure boron deposition on silicon

L Qi, LK Nanver

Research output: Contribution to journal › Article › Scientific › peer-review

27 Citations (Scopus)

Original language	English
Pages (from-to)	102-104
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	2
DOIs	https://doi.org/10.1109/LED.2014.2386296
Publication status	Published - 2015

Harvest
Published online 25-12-2014

Access to Document

@article{b7d2b8cce2f34535b9bd38ee582ea6cf,

title = "Conductance along the interface formed by 400 °C pure boron deposition on silicon",

author = "L Qi and LK Nanver",

note = "Harvest Published online 25-12-2014",

year = "2015",

doi = "10.1109/LED.2014.2386296",

language = "English",

volume = "36",

pages = "102--104",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "2",

}

TY - JOUR

T1 - Conductance along the interface formed by 400 °C pure boron deposition on silicon

AU - Qi, L

AU - Nanver, LK

N1 - Harvest Published online 25-12-2014

PY - 2015

Y1 - 2015

U2 - 10.1109/LED.2014.2386296

DO - 10.1109/LED.2014.2386296

M3 - Article

SN - 0741-3106

VL - 36

SP - 102

EP - 104

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -