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Crystal Phase Quantum Well Emission with Digital Control. / Assali, S.; Lähnemann, J.; Vu, TTT; Jöns, K. D.; Gagliano, L; Verheijen, M. A.; Akopian, N.; Bakkers, E. P.A.M.; Haverkort, J. E.M.

In: Nano Letters: a journal dedicated to nanoscience and nanotechnology, Vol. 17, No. 10, 11.10.2017, p. 6062-6068.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Assali, S, Lähnemann, J, Vu, TTT, Jöns, KD, Gagliano, L, Verheijen, MA, Akopian, N, Bakkers, EPAM & Haverkort, JEM 2017, 'Crystal Phase Quantum Well Emission with Digital Control' Nano Letters: a journal dedicated to nanoscience and nanotechnology, vol. 17, no. 10, pp. 6062-6068. https://doi.org/10.1021/acs.nanolett.7b02489

APA

Assali, S., Lähnemann, J., Vu, TTT., Jöns, K. D., Gagliano, L., Verheijen, M. A., ... Haverkort, J. E. M. (2017). Crystal Phase Quantum Well Emission with Digital Control. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 17(10), 6062-6068. https://doi.org/10.1021/acs.nanolett.7b02489

Vancouver

Assali S, Lähnemann J, Vu TTT, Jöns KD, Gagliano L, Verheijen MA et al. Crystal Phase Quantum Well Emission with Digital Control. Nano Letters: a journal dedicated to nanoscience and nanotechnology. 2017 Oct 11;17(10):6062-6068. https://doi.org/10.1021/acs.nanolett.7b02489

Author

Assali, S. ; Lähnemann, J. ; Vu, TTT ; Jöns, K. D. ; Gagliano, L ; Verheijen, M. A. ; Akopian, N. ; Bakkers, E. P.A.M. ; Haverkort, J. E.M. / Crystal Phase Quantum Well Emission with Digital Control. In: Nano Letters: a journal dedicated to nanoscience and nanotechnology. 2017 ; Vol. 17, No. 10. pp. 6062-6068.

BibTeX

@article{9fc6660561244aa49befa400a314ad69,
title = "Crystal Phase Quantum Well Emission with Digital Control",
abstract = "One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.",
keywords = "crystal phase quantum well, gallium phosphide, photoluminescence, Semiconductor nanowire, spontaneous polarization",
author = "S. Assali and J. L{\"a}hnemann and TTT Vu and J{\"o}ns, {K. D.} and L Gagliano and Verheijen, {M. A.} and N. Akopian and Bakkers, {E. P.A.M.} and Haverkort, {J. E.M.}",
year = "2017",
month = "10",
day = "11",
doi = "10.1021/acs.nanolett.7b02489",
language = "English",
volume = "17",
pages = "6062--6068",
journal = "Nano Letters: a journal dedicated to nanoscience and nanotechnology",
issn = "1530-6984",
publisher = "American Chemical Society (ACS)",
number = "10",

}

RIS

TY - JOUR

T1 - Crystal Phase Quantum Well Emission with Digital Control

AU - Assali, S.

AU - Lähnemann, J.

AU - Vu, TTT

AU - Jöns, K. D.

AU - Gagliano, L

AU - Verheijen, M. A.

AU - Akopian, N.

AU - Bakkers, E. P.A.M.

AU - Haverkort, J. E.M.

PY - 2017/10/11

Y1 - 2017/10/11

N2 - One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

AB - One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

KW - crystal phase quantum well

KW - gallium phosphide

KW - photoluminescence

KW - Semiconductor nanowire

KW - spontaneous polarization

UR - http://resolver.tudelft.nl/uuid:9fc66605-6124-4aa4-9bef-a400a314ad69

UR - http://www.scopus.com/inward/record.url?scp=85031098565&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.7b02489

DO - 10.1021/acs.nanolett.7b02489

M3 - Article

VL - 17

SP - 6062

EP - 6068

JO - Nano Letters: a journal dedicated to nanoscience and nanotechnology

T2 - Nano Letters: a journal dedicated to nanoscience and nanotechnology

JF - Nano Letters: a journal dedicated to nanoscience and nanotechnology

SN - 1530-6984

IS - 10

ER -

ID: 37691913