• Binh Minh Nguyen
  • Andrey A. Kiselev
  • Ramsey Noah
  • Wei Yi
  • Fanming Qu
  • Arjan J.A. Beukman
  • Folkert K. De Vries
  • Jasper Van Veen
  • Stevan Nadj-Perge
  • Leo P. Kouwenhoven
  • Morten Kjaergaard
  • Henri J. Suominen
  • Fabrizio Nichele
  • Charles M. Marcus
  • Michael J. Manfra
  • Marko Sokolich

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

Original languageEnglish
Article number077701
Number of pages5
JournalPhysical Review Letters
Issue number7
Publication statusPublished - 12 Aug 2016

ID: 45205326