Abstract
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
Original language | English |
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Article number | 077701 |
Number of pages | 5 |
Journal | Physical Review Letters |
Volume | 117 |
Issue number | 7 |
DOIs | |
Publication status | Published - 12 Aug 2016 |