Delamination Toughness of Cu-EMC Interfaces at Harsh Environment

M Sadeghinia, KMB Jansen, LJ Ernst, G Schlottig, H Pape

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

6 Citations (Scopus)

Abstract

Interfacial delamination has become one of the key reliability issues in the microelectronic industry and therefore is getting more and more attention. The analysis of delamination of a laminate structure with a crack along the interface is central to the characterization of the interfacial toughness. Interfacial toughness is highly dependent of temperature, moisture and mode mixity. the present study deals with delamination toughness measurements of an epoxy molding compound - copper lead frame interface as directly obtained from a real production process in harsh environment, temperature >100 degrees C & 100%RH. To deal with it, a chamber with high pressure, i.e. pressure vessel or pressure cooker, is needed. Controlling the inside pressure makes it possible to have 100% RH at different temperature levels. In addition to the initial stress state due to the harsh environment, mechanical loading under combined mode I/II conditions is applied on a bi-material specimen to initiate and propagate the delamination. For this a mixed mode bending setup is installed in the pressure chamber.
Original languageEnglish
Title of host publicationProceedings of IEEE 61st Electronic Components and Technology Conference, 31 May -3 June, 2011, Lake Buena Vista, FL, USA
Editors n.a.
Place of PublicationLake Buena Vista, FL, USA
PublisherIEEE Society
Pages1976-1980
Number of pages5
ISBN (Print)978-1-61284-496-1
Publication statusPublished - 2011
EventIEEE 61st Electronic Components and Technology Conference, Lake Buena Vista, FL, USA - Lake Buena Vista, FL, USA
Duration: 31 May 20113 Jun 2011

Publication series

Name
PublisherIEEE

Conference

ConferenceIEEE 61st Electronic Components and Technology Conference, Lake Buena Vista, FL, USA
Period31/05/113/06/11

Keywords

  • conference contrib. refereed
  • Conf.proc. > 3 pag

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