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Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma. / Biasotto, C; Daltrini, AM; Teixeira, RC; Boscoli, FA; Diniz, JA; Moshkalev, SA; Doi, I.

In: Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures, Vol. 25, No. 4, 2007, p. 1166-1170.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Biasotto, C, Daltrini, AM, Teixeira, RC, Boscoli, FA, Diniz, JA, Moshkalev, SA & Doi, I 2007, 'Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma', Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures, vol. 25, no. 4, pp. 1166-1170.

APA

Biasotto, C., Daltrini, AM., Teixeira, RC., Boscoli, FA., Diniz, JA., Moshkalev, SA., & Doi, I. (2007). Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma. Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures, 25(4), 1166-1170.

Vancouver

Biasotto C, Daltrini AM, Teixeira RC, Boscoli FA, Diniz JA, Moshkalev SA et al. Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma. Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures. 2007;25(4):1166-1170.

Author

Biasotto, C ; Daltrini, AM ; Teixeira, RC ; Boscoli, FA ; Diniz, JA ; Moshkalev, SA ; Doi, I. / Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma. In: Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures. 2007 ; Vol. 25, No. 4. pp. 1166-1170.

BibTeX

@article{8d818b3e53544dc2b2c5b6e41235b6a9,
title = "Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma",
keywords = "academic journal papers, Geen BTA classificatie",
author = "C Biasotto and AM Daltrini and RC Teixeira and FA Boscoli and JA Diniz and SA Moshkalev and I Doi",
year = "2007",
language = "Undefined/Unknown",
volume = "25",
pages = "1166--1170",
journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

RIS

TY - JOUR

T1 - Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma

AU - Biasotto, C

AU - Daltrini, AM

AU - Teixeira, RC

AU - Boscoli, FA

AU - Diniz, JA

AU - Moshkalev, SA

AU - Doi, I

PY - 2007

Y1 - 2007

KW - academic journal papers

KW - Geen BTA classificatie

M3 - Article

VL - 25

SP - 1166

EP - 1170

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

ER -

ID: 2889303