Device-Aware Test for Emerging Memories: Enabling Your Test Program for DPPB Level

L. Wu; M. Fieback; M. Taouil; S. Hamdioui

doi:10.1109/ETS48528.2020.9131559

Device-Aware Test for Emerging Memories: Enabling Your Test Program for DPPB Level

L. Wu, M. Fieback, M. Taouil, S. Hamdioui

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

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Abstract

This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.

Original language	English
Title of host publication	2020 IEEE European Test Symposium (ETS)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Electronic)	978-1-7281-4312-5
ISBN (Print)	978-1-7281-4313-2
DOIs	https://doi.org/10.1109/ETS48528.2020.9131559
Publication status	Published - 2020
Event	ETS 2020: 2020 IEEE European Test Symposium - Tallinn, Estonia Duration: 25 May 2020 → 29 May 2020

Conference

Conference	ETS 2020
Country/Territory	Estonia
City	Tallinn
Period	25/05/20 → 29/05/20

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ETS20_DATAccepted author manuscript, 448 KB

Cite this

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title = "Device-Aware Test for Emerging Memories: Enabling Your Test Program for DPPB Level",

abstract = "This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.",

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AB - This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole defects in STT-MRAMs and forming defects in RRAMs.

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DO - 10.1109/ETS48528.2020.9131559

M3 - Conference contribution

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BT - 2020 IEEE European Test Symposium (ETS)

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Y2 - 25 May 2020 through 29 May 2020

ER -

Device-Aware Test for Emerging Memories: Enabling Your Test Program for DPPB Level

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