Standard

Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations. / Zhu, G; Dai, Y; Shu, D; Xiao, Y; Yang, Y; Wang, J; Sun, B; Boom, R.

In: Intermetallics, Vol. 19, 2011, p. 1036-1040.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Zhu, G, Dai, Y, Shu, D, Xiao, Y, Yang, Y, Wang, J, Sun, B & Boom, R 2011, 'Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.', Intermetallics, vol. 19, pp. 1036-1040.

APA

Zhu, G., Dai, Y., Shu, D., Xiao, Y., Yang, Y., Wang, J., Sun, B., & Boom, R. (2011). Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations. Intermetallics, 19, 1036-1040.

Vancouver

Zhu G, Dai Y, Shu D, Xiao Y, Yang Y, Wang J et al. Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations. Intermetallics. 2011;19:1036-1040.

Author

Zhu, G ; Dai, Y ; Shu, D ; Xiao, Y ; Yang, Y ; Wang, J ; Sun, B ; Boom, R. / Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations. In: Intermetallics. 2011 ; Vol. 19. pp. 1036-1040.

BibTeX

@article{ad09f5fd585844338530efc112dfdefc,
title = "Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.",
keywords = "CWTS 0.75 <= JFIS < 2.00",
author = "G Zhu and Y Dai and D Shu and Y Xiao and Y Yang and J Wang and B Sun and R Boom",
year = "2011",
language = "English",
volume = "19",
pages = "1036--1040",
journal = "Intermetallics",
issn = "0966-9795",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.

AU - Zhu, G

AU - Dai, Y

AU - Shu, D

AU - Xiao, Y

AU - Yang, Y

AU - Wang, J

AU - Sun, B

AU - Boom, R

PY - 2011

Y1 - 2011

KW - CWTS 0.75 <= JFIS < 2.00

M3 - Article

VL - 19

SP - 1036

EP - 1040

JO - Intermetallics

JF - Intermetallics

SN - 0966-9795

ER -

ID: 3823307