Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device

C. De Martino; E. S. Malotaux; L. Galatro; M. Spirito

doi:10.1109/ARFTG.2018.8423821

Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device

C. De Martino, E. S. Malotaux, L. Galatro, M. Spirito

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

In this paper we present the measurement procedure to achieve direct on-wafer absolute power calibration in VNA-based mm-wave setups. The proposed approach employs 28 nm CMOS n-channel MOSFET as the power calibration transfer device, providing sufficient responsivity up to 325 GHz. The square law conversion from mm-wave (power) to DC (voltage) through the CMOS device is employed to achieve a direct on-wafer power calibration. The use of the calibration transfer device allows for a (power) calibration procedure of a mm-wave measurement setup with zero extender movements, thus minimizing errors originating from cable movements, and reducing calibration time when compared to the standard, calorimeter based, procedure. The approach is experimentally benchmarked against the instrumentation power meters procedure in the WR5 band (140220 GHz), showing a maximum error propagated through the calibration equations, over the entire band and multiple devices, lower than 1 dB.

Original language	English
Title of host publication	2018 91st ARFTG Microwave Measurement Conference
Subtitle of host publication	Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018
Editors	Dominique Schreurs, Andrej Rumiantsev, Jean-Pierre Teyssier
Place of Publication	Piscataway, NJ, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
ISBN (Electronic)	978-1-5386-5450-7
ISBN (Print)	978-1-5386-5449-1
DOIs	https://doi.org/10.1109/ARFTG.2018.8423821
Publication status	Published - 2018
Event	ARFTG 2018: 91st ARFTG Microwave Measurement Conference - Philadelphia, United States Duration: 15 Jun 2018 → 15 Jun 2018

Conference

Conference	ARFTG 2018: 91st ARFTG Microwave Measurement Conference
Abbreviated title	ARFTG 2018
Country/Territory	United States
City	Philadelphia
Period	15/06/18 → 15/06/18

Keywords

large signal characterization
mm-wave
on-wafer
power calibration
power control
S-parameters
square-law detector

Access to Document

10.1109/ARFTG.2018.8423821

Cite this

De Martino, C., Malotaux, E. S., Galatro, L., & Spirito, M. (2018). Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device. In D. Schreurs, A. Rumiantsev, & J.-P. Teyssier (Eds.), 2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018 Article 8423821 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ARFTG.2018.8423821

De Martino, C. ; Malotaux, E. S. ; Galatro, L. et al. / Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device. 2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018. editor / Dominique Schreurs ; Andrej Rumiantsev ; Jean-Pierre Teyssier. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers (IEEE), 2018.

@inproceedings{682ed0c9241d42c99f329aa25a25b4c2,

title = "Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device",

abstract = "In this paper we present the measurement procedure to achieve direct on-wafer absolute power calibration in VNA-based mm-wave setups. The proposed approach employs 28 nm CMOS n-channel MOSFET as the power calibration transfer device, providing sufficient responsivity up to 325 GHz. The square law conversion from mm-wave (power) to DC (voltage) through the CMOS device is employed to achieve a direct on-wafer power calibration. The use of the calibration transfer device allows for a (power) calibration procedure of a mm-wave measurement setup with zero extender movements, thus minimizing errors originating from cable movements, and reducing calibration time when compared to the standard, calorimeter based, procedure. The approach is experimentally benchmarked against the instrumentation power meters procedure in the WR5 band (140220 GHz), showing a maximum error propagated through the calibration equations, over the entire band and multiple devices, lower than 1 dB.",

keywords = "large signal characterization, mm-wave, on-wafer, power calibration, power control, S-parameters, square-law detector",

author = "{De Martino}, C. and Malotaux, {E. S.} and L. Galatro and M. Spirito",

year = "2018",

doi = "10.1109/ARFTG.2018.8423821",

language = "English",

isbn = "978-1-5386-5449-1",

editor = "Schreurs, {Dominique } and Rumiantsev, {Andrej } and Teyssier, {Jean-Pierre }",

booktitle = "2018 91st ARFTG Microwave Measurement Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "ARFTG 2018: 91st ARFTG Microwave Measurement Conference, ARFTG 2018 ; Conference date: 15-06-2018 Through 15-06-2018",

}

De Martino, C, Malotaux, ES, Galatro, L & Spirito, M 2018, Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device. in D Schreurs, A Rumiantsev & J-P Teyssier (eds), 2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018., 8423821, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, USA, ARFTG 2018: 91st ARFTG Microwave Measurement Conference, Philadelphia, United States, 15/06/18. https://doi.org/10.1109/ARFTG.2018.8423821

Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device. / De Martino, C.; Malotaux, E. S.; Galatro, L. et al.
2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018. ed. / Dominique Schreurs; Andrej Rumiantsev; Jean-Pierre Teyssier. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers (IEEE), 2018. 8423821.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device

AU - De Martino, C.

AU - Malotaux, E. S.

AU - Galatro, L.

AU - Spirito, M.

PY - 2018

Y1 - 2018

N2 - In this paper we present the measurement procedure to achieve direct on-wafer absolute power calibration in VNA-based mm-wave setups. The proposed approach employs 28 nm CMOS n-channel MOSFET as the power calibration transfer device, providing sufficient responsivity up to 325 GHz. The square law conversion from mm-wave (power) to DC (voltage) through the CMOS device is employed to achieve a direct on-wafer power calibration. The use of the calibration transfer device allows for a (power) calibration procedure of a mm-wave measurement setup with zero extender movements, thus minimizing errors originating from cable movements, and reducing calibration time when compared to the standard, calorimeter based, procedure. The approach is experimentally benchmarked against the instrumentation power meters procedure in the WR5 band (140220 GHz), showing a maximum error propagated through the calibration equations, over the entire band and multiple devices, lower than 1 dB.

AB - In this paper we present the measurement procedure to achieve direct on-wafer absolute power calibration in VNA-based mm-wave setups. The proposed approach employs 28 nm CMOS n-channel MOSFET as the power calibration transfer device, providing sufficient responsivity up to 325 GHz. The square law conversion from mm-wave (power) to DC (voltage) through the CMOS device is employed to achieve a direct on-wafer power calibration. The use of the calibration transfer device allows for a (power) calibration procedure of a mm-wave measurement setup with zero extender movements, thus minimizing errors originating from cable movements, and reducing calibration time when compared to the standard, calorimeter based, procedure. The approach is experimentally benchmarked against the instrumentation power meters procedure in the WR5 band (140220 GHz), showing a maximum error propagated through the calibration equations, over the entire band and multiple devices, lower than 1 dB.

KW - large signal characterization

KW - mm-wave

KW - on-wafer

KW - power calibration

KW - power control

KW - S-parameters

KW - square-law detector

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DO - 10.1109/ARFTG.2018.8423821

M3 - Conference contribution

AN - SCOPUS:85051503791

SN - 978-1-5386-5449-1

BT - 2018 91st ARFTG Microwave Measurement Conference

A2 - Schreurs, Dominique

A2 - Rumiantsev, Andrej

A2 - Teyssier, Jean-Pierre

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ, USA

T2 - ARFTG 2018: 91st ARFTG Microwave Measurement Conference

Y2 - 15 June 2018 through 15 June 2018

ER -

De Martino C, Malotaux ES, Galatro L , Spirito M. Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device. In Schreurs D, Rumiantsev A, Teyssier JP, editors, 2018 91st ARFTG Microwave Measurement Conference: Wideband Modulated Test Signals for Network Analysis of Wireless Infrastructure Building Blocks, ARFTG 2018. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers (IEEE). 2018. 8423821 doi: 10.1109/ARFTG.2018.8423821

Direct mm-Wave On-Wafer Power Calibration Employing CMOS as a Transfer Device

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Keywords

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