Effect of silicon nanowire etching on signal-to-noise ratio of SiNW FETs for (bio)sensor applications

T Moh Shan Yau, M Nie, G Pandraud, LCPM de Smet, EJR Sudholter, Q-A Huang, PM Sarro

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@article{efb669e0a4cc4488a23b8961c58ab74a,

title = "Effect of silicon nanowire etching on signal-to-noise ratio of SiNW FETs for (bio)sensor applications",

author = "{Moh Shan Yau}, T and M Nie and G Pandraud and {de Smet}, LCPM and EJR Sudholter and Q-A Huang and PM Sarro",

year = "2013",

doi = "10.1049/el.2013.1397",

language = "English",

volume = "49",

pages = "1--2",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "13",

}

TY - JOUR

T1 - Effect of silicon nanowire etching on signal-to-noise ratio of SiNW FETs for (bio)sensor applications

AU - Moh Shan Yau, T

AU - Nie, M

AU - Pandraud, G

AU - de Smet, LCPM

AU - Sudholter, EJR

AU - Huang, Q-A

AU - Sarro, PM

PY - 2013

Y1 - 2013

U2 - 10.1049/el.2013.1397

DO - 10.1049/el.2013.1397

M3 - Article

SN - 0013-5194

VL - 49

SP - 1

EP - 2

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -